TITLE

Influence of surface defects on the electrical behavior of aluminum-porous silicon junctions

AUTHOR(S)
Cadet, C.; Deresmes, D.
PUB. DATE
May 1994
SOURCE
Applied Physics Letters;5/23/1994, Vol. 64 Issue 21, p2827
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the effects of surface defects on the electrical behavior of aluminum-porous silicon (PSi) junctions. Characteristics of energy location near midgap and trap concentration; Contention on low conductivity of PSi layers; Increase in the band gap of PSi materials caused by quantum confinement.
ACCESSION #
4258328

 

Related Articles

  • X-ray photoelectron spectroscopic studies of the chemical nature of as-prepared and NaOH-treated.... Murakoshi, Kei; Uosaki, K. // Applied Physics Letters;4/5/1993, Vol. 62 Issue 14, p1676 

    Examines the chemical nature of the surface of as-prepared and surface-treated porous silicon layer (PSL). Use of x-ray photoelectron spectroscopy; Effect of NaOH treatment on the chemical nature; Formation of As-prepared PSL by silicon anodic oxidation; Chemical states of surface silicon at...

  • Blocking effect of charge transfer at the porous silicon/silicon interface. Dittrich, Th.; Rappich, J. // Applied Physics Letters;5/19/1997, Vol. 70 Issue 20, p2705 

    Investigates the photoluminescence (PL) of a thin porous silicon surface layer. Influence of the absorption of used pulsed nitrogen[sub 2] laser on the porous silicon surface layer; Information on the radiative recombination and PL intensity of porous silicon; Effects of an ethanol atmosphere...

  • How methanol affects the surface of blue and red emitting porous silicon. Rehm, J.M.; McLendon, G.L. // Applied Physics Letters;6/26/1995, Vol. 66 Issue 26, p3669 

    Investigates the effect of liquid methanol on the surface of blue and red emitting porous silicon. Comparison between hydrogen and oxygen passivated red emitting samples; Factors causing the sensitivity of red samples; Photoluminescence spectra of the red emitting samples.

  • Molecular Dynamics Simulation of Defect Formation in an Aluminum Crystal under Low-Energy Ion Bombardment. Kornich, G. V.; Betz, G.; Bazhin, A. I. // Physics of the Solid State;Jan2001, Vol. 43 Issue 1, p29 

    Atomic collision cascades initiated by Ar and Xe ions (with energies of 25, 40, and 50 eV) normally incident on the Al(100) crystal surface at a crystal temperature of 300 K have been simulated by the molecular dynamics technique. The formation of vacancies and radiation-adsorbed and...

  • Correlated barrier hopping in ZnO nanorods. Soosen, Samuel M.; Chandran, Anoop; Koshy, Jiji; George, K. C. // Journal of Applied Physics;Jun2011, Vol. 109 Issue 11, p113702 

    The ac conduction in ZnO nanorods has been investigated in the frequency range of 100 Hz-1 MHz and at various temperatures between 303 and 543 K. An agreement between experimental and theoretical results suggests that the ac conduction in ZnO nanorods can be successfully explained by Correlated...

  • Ageing of aluminum electrical contacts to porous silicon. Martin-Palma, R. J.; Perez-Rigueiro, J. // Journal of Applied Physics;1/1/1999, Vol. 85 Issue 1, p583 

    Focuses on the variation of the electrical properties of aluminum/porous silicon/silicon (Al/PS/Si) structures as a function of the exposition of PS to the atmosphere. Densities of the porous PS layer; Electrical characterization of silicon components; Results and discussion.

  • Correlation of surface morphology with luminescence of porous Si films by scanning tunneling.... Enachescu, M.; Hartmann, E.; Koch, F. // Applied Physics Letters;3/14/1994, Vol. 64 Issue 11, p1365 

    Demonstrates the evolution of visible photoluminescence of porous silicon films. Study of surface structure on a nanometer scale; Use of scanning tunneling microscopy; Preparation of samples under several conditions; Correlation between surface morphology and luminescence.

  • Ensure the Process, Not the Product. Spada, Alfred T. // Modern Casting;Nov2009, Vol. 99 Issue 11, p9 

    The article focuses on the philosophy of some facilities to ensure the process rather than the product during manufacturing. According to the author, giving more focus on optimizing the process and eliminating defects during production to guarantee defect-free castings exit the facility is more...

  • Stacking fault tetrahedra in aluminum. Guan, Q. F.; Pan, L.; Zou, H.; Wu, A. M.; Hao, S. Z.; Zhang, Q. Y.; Dong, C.; Zou, G. T. // Journal of Materials Science;Oct2004, Vol. 39 Issue 20, p6349 

    Discusses the stacking fault tetrahedra (SFT) in aluminum. Structure defect originating from vacancy clustering; Formation of SFT in a single-crystal aluminum sample; Irradiation process; Prismatic dislocation loops.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics