Influence of surface defects on the electrical behavior of aluminum-porous silicon junctions

Cadet, C.; Deresmes, D.
May 1994
Applied Physics Letters;5/23/1994, Vol. 64 Issue 21, p2827
Academic Journal
Examines the effects of surface defects on the electrical behavior of aluminum-porous silicon (PSi) junctions. Characteristics of energy location near midgap and trap concentration; Contention on low conductivity of PSi layers; Increase in the band gap of PSi materials caused by quantum confinement.


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