Sensitive plasma etching endpoint detection using tunable diode laser absorption spectroscopy

Sun, H.C.; Patel, V.
May 1994
Applied Physics Letters;5/23/1994, Vol. 64 Issue 21, p2779
Academic Journal
Examines the use of tunable diode laser absorption spectroscopy as a sensitive plasma etching endpoint detector. Use of SF[sub 6] to etch multilayer silicon test wafers in a radio frequency powered plasma etching reactor; Method for monitoring the etch process; Factors influencing the formation and evolution rate of etch byproducts.


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