Thermal stability of GaN investigated by low-temperature photoluminescence spectroscopy

Lin, M.E.; Sverdlov, B.N.
December 1993
Applied Physics Letters;12/27/1993, Vol. 63 Issue 26, p3625
Academic Journal
Examines the thermal behavior of gallium nitride (GaN) films by low-temperature photoluminescence (PL) spectroscopy. Subjection of the samples under annealing at elevated temperatures; Improvement of the free-exciton transition PL line intensity; Factors attributed for the inferior crystalline quality of GaN samples.


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