InSb p-channel metal-oxide-semiconductor field-effect transistor prepared by photoenhanced

Biing-Der Liu; Si-Chen Lee
December 1993
Applied Physics Letters;12/27/1993, Vol. 63 Issue 26, p3622
Academic Journal
Details the fabrication of the InSb metal-oxide-semiconductor field-effect transistor. Use of the silicon dioxide as the gate insulator and the source/drain passivation layer; Display of breakdown voltage by the common-source current-voltage characteristics; Observation of an anomalous kink effect in the common-source I-V characteristics.


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