Thin oxynitride film metal-oxide-semiconductor transistors prepared by low-pressure rapid

McLarty, P.K.; Hill, W.L.
December 1993
Applied Physics Letters;12/27/1993, Vol. 63 Issue 26, p3619
Academic Journal
Demonstrates the deposition of thin silicon oxynitride films using low-pressure rapid thermal chemical vapor deposition. Results of metal-oxide-semiconductor transistor transconductance measurements; Subjection of the films under tensile stress; Performance of hot carrier stress at maximum substrate current.


Related Articles

  • Nucleation and growth of Cu films during the initial stage of chemical vapor deposition. Chae, Y. K.; Komiyama, H. // Journal of Applied Physics;10/1/2001, Vol. 90 Issue 7, p3610 

    The nucleation and growth of Cu nanoparticles during the initial stage of film growth by chemical vapor deposition was investigated using transmission electron microscopy and energy dispersive x-ray spectroscopy analysis. Cu nanoparticles did not migrate on the SiO[sub 2] surface because the Cu...

  • Rapid thermal low-pressure metal organic chemical vapor deposition of Fe-doped InP layers. Kreinin, O.; Bahir, G. // Applied Physics Letters;1/21/2002, Vol. 80 Issue 3, p422 

    High quality Fe-doped InP layers have been grown by means of rapid thermal low-pressure metal organic chemical vapor deposition. Trimethylindium, tertiarybutylphosphine, and ferrocene were used as indium, phosphorus, and iron sources, respectively. The best growth conditions are: V–III...

  • Textured diamond films growth on (100) silicon via electron-assisted hot filament chemical vapor.... Fu, G.S.; Wang, X.H. // Applied Physics Letters;4/14/1997, Vol. 70 Issue 15, p1965 

    Investigates the growth of textured diamond films on silicon substrates using electron assisted hot filament chemical vapor deposition. Characterization of deposited films by scanning electron and Raman spectroscopy; Effect of electron bombardment on the oriented growth of diamond particles;...

  • Rapid thermal chemical vapor deposition of in situ boron-doped polycrystalline silicon-germanium.... Li, V.Z-Q; Mirabedini, M.R. // Applied Physics Letters;12/8/1997, Vol. 71 Issue 23, p3388 

    Examines the formation of boron-doped polycrystalline silicon-germanium (Si[sub 1-x]Ge[sub x]) films on thermally grown oxides by chemical vapor deposition. Link between Ge content and germane percentage in gas source; Indication of a high level of boron doping at poly-Si[sub 1-x]Ge[sub...

  • Spatial charge distribution in the plasma-enhanced chemical vapor deposited nitrogen-rich silicon nitride. Kanicki, J.; Hug, S. // Applied Physics Letters;2/20/1989, Vol. 54 Issue 8, p733 

    Gate quality N-rich silicon nitride films, with low bulk dangling bond densities, have been prepared by plasma-enhanced chemical vapor deposition at a substrate temperature of 400 °C. Films of different thicknesses, ranging from 200 to 10 500 Å, were obtained by varying the deposition...

  • Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafers. Powell, J.A.; Petit, J.B.; Edgar, J.H.; Jenkins, I.G.; Matus, L.G.; Yang, J.W.; Pirouz, P.; Choyke, W.J.; Clemen, L.; Yoganathan, M. // Applied Physics Letters;7/15/1991, Vol. 59 Issue 3, p333 

    Examines the growth of 6H-silicon carbide (SiC) single-crystal films by chemical vapor deposition. Treatment of pregrowth surface; Development of SiC semiconductor technology; Control of SiC polytype in the epitaxial film growth process.

  • Single-crystalline, epitaxial cubic SiC films grown on (100) Si at 750 degrees C by chemical.... Golecki, I.; Reidinger, F. // Applied Physics Letters;4/6/1992, Vol. 60 Issue 14, p1703 

    Investigates the single-crystalline, epitaxial cubic silicon carbide films grown on (100) silicon by chemical vapor deposition. Observation on the epitaxial growth temperature; Exclusion of surface carbonization step and halogenated compounds in the study; Comparison to the crystalline quality...

  • Epitaxial growth of β-SiC thin films on 6H α-SiC substrates via chemical vapor deposition. Kong, H. S.; Glass, J. T.; Davis, R. F. // Applied Physics Letters;10/27/1986, Vol. 49 Issue 17, p1074 

    Epitaxial films of cubic β-SiC(111) have been grown via chemical vapor deposition at 1683 K on (0001) substrates of hexagonal 6H α-SiC. Optical microscopy of the surface indicated that a decrease in the ratio of the sum of the C and Si source gases to the H2 carrier gas changed the...

  • Homoepitaxial films grown on Si (100) at 150 °C by remote plasma-enhanced chemical vapor deposition. Breaux, L.; Anthony, B.; Hsu, T.; Banerjee, S.; Tasch, A. // Applied Physics Letters;10/30/1989, Vol. 55 Issue 18, p1885 

    Low-temperature silicon epitaxy is critical for future generation ultralarge scale integrated circuits and silicon-based heterostructures. Remote plasma-enhanced chemical vapor deposition has been applied to achieve silicon homoepitaxy at temperatures as low as 150 °C, which is believed to be...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics