TITLE

Comparison of electroabsorption in tensile-strained and lattice-matched GaAs(P)/AlGaAs quantum

AUTHOR(S)
Gomatam, Badri N.; Anderson, Neal G.
PUB. DATE
December 1993
SOURCE
Applied Physics Letters;12/27/1993, Vol. 63 Issue 26, p3616
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Compares the electroabsorption of tensile-strained and lattice-matched GaAs(P)/AlGaAs quantum wells. Use of thin active regions to avoid strain relaxation in the tensile-strength quantum wells; Potential of waveguide modulators utilizing the Auger electron microscopy; Increased modulation depths at low drive voltages in the tensile-strained devices.
ACCESSION #
4258294

 

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