TITLE

Surface recombination velocities on processed InGaP p-n junctions

AUTHOR(S)
Pearton, S.J.; Ren, F.
PUB. DATE
December 1993
SOURCE
Applied Physics Letters;12/27/1993, Vol. 63 Issue 26, p3610
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Details the fabrication of InGaP p-n junction mesa diodes by wet or dry etching and the measured surface recombination velocities (S[sub v]). Failure of the dry etching process to increase the S values; Absence of degradation of the surface properties of the mesa diodes; Display of changes in surface recombination velocities by the AlGaAs p-n junction.
ACCESSION #
4258292

 

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