Effect of hydrogen on surface roughening during Si homoepitaxial growth

Adams, D.P.; Yalisove, S.M.
December 1993
Applied Physics Letters;12/27/1993, Vol. 63 Issue 26, p3571
Academic Journal
Examines the influence of hydrogen on the evolution of surface roughening during Si(100) homoepitaxy. Presence of surface roughness within the epitaxial film; Dependence of the rate at which the surface roughens on the partial pressure of deuterium; Observation on the crystalline to amorphous transition.


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