TITLE

Temperature dependence of ion beam mixing in GaAs, AlAs, and GaAs/AlAs/GaAs

AUTHOR(S)
Klatt, J.L.; Averback, R.S.
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/16/1993, Vol. 63 Issue 7, p976
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the ion beam mixing of aluminum arsenide (AlAs) semiconductors in gallium arsenide (GaAs) and GaAs markers in AlAs as a function of irradiation temperature. Values of the different matrix mixing parameter at varied temperatures; Influence of crystal structure on ion beam mixing; Explanation for the trilayer sample temperature dependence.
ACCESSION #
4258257

 

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