Temperature dependence of ion beam mixing in GaAs, AlAs, and GaAs/AlAs/GaAs

Klatt, J.L.; Averback, R.S.
August 1993
Applied Physics Letters;8/16/1993, Vol. 63 Issue 7, p976
Academic Journal
Examines the ion beam mixing of aluminum arsenide (AlAs) semiconductors in gallium arsenide (GaAs) and GaAs markers in AlAs as a function of irradiation temperature. Values of the different matrix mixing parameter at varied temperatures; Influence of crystal structure on ion beam mixing; Explanation for the trilayer sample temperature dependence.


Related Articles

  • Formation of extremely low resistance Ti/Pt/Au ohmic contacts to p-GaAs. Stareev, G. // Applied Physics Letters;5/31/1993, Vol. 62 Issue 22, p2801 

    Examines the characteristics of low resistance nonalloyed titanium/platinum/gold ohmic contacts formed on heavily doped p-gallium arsenide semiconductors by ion bombardment. Correlation of the electrical properties and structural modifications of the interface; Contact resistivity of the...

  • Electronic properties of defects introduced during low-energy He-ion bombardment of epitaxially grown n-GaAs. Auret, F.D.; Goodman, S.A. // Applied Physics Letters;6/3/1996, Vol. 68 Issue 23, p3275 

    Investigates the defects introduced by low-energy helium-ion bombardment of epitaxially grown n-gallium arsenide. Application of deep level transient spectroscopy; Introduction of four electron traps on high energy levels; Location of defects in disordered region close to interface.

  • Surface topology of GaAs(100) after focused ion beam implantation os Si[sup ++]. Schmuki, P.; Erickson, L.E. // Applied Physics Letters;3/10/1997, Vol. 70 Issue 10, p1305 

    Applies GaAs(100) to Si[sup ++] doses ranging from 3x10[sup 13] to 3x10[sup 16]cm[sup -2] using a focused ion beam. Examination of the surface topology and roughness of implanted lines and squares; Discovery of height protrusions and surface roughness; Discussion of the different causes of...

  • Enhanced photoluminescence from gallium arsenide semiconductor coated with Au nanoparticles. Xiuli Zhou; Qiangmin Wei; Lumin Wang; Joshi, Bhuwan; Qihuo Wei; Kai Sun // Applied Physics A: Materials Science & Processing;Aug2009, Vol. 96 Issue 3, p637 

    We demonstrate a method for improving photoluminescence of gallium arsenide semiconductor by simply coating a thin layer of Au nanoparticles on its surface. Further focused ion beam bombardment at the sputter-coated Au film was conducted to control the size, the distribution, and the morphology...

  • Long-lived dry-etched AlGaAs/GaAs ridge waveguide laser diodes. Harding, C. M.; Waters, R. G. // Applied Physics Letters;5/28/1990, Vol. 56 Issue 22, p2175 

    Chemically assisted ion beam etching has been utilized to fabricate ridge waveguide GaAs/AlGaAs lasers which are as reliable, if not more so, than their oxide stripe counterparts. Results on 60- and 5-μm-wide ridge waveguide lasers with 600 μm cavity lengths as compared to oxide stripe...

  • In situ Si Doping in GaAs using Low-energy Focused Si Ion Beam/Molecular Beam Epitaxy Combined System. Kubo, Kuniyuki; Yanagisawa, Junichi; Wakaya, Fujio; Yuba, Yoshihiko; Gamo, Kenji // AIP Conference Proceedings;2003, Vol. 680 Issue 1, p662 

    Using 200 eV focused Si ion beam (Si FIB) combined with molecular beam epitaxy (MBE) system, high-dose Si implantation in GaAs at laterally selected area was performed masklessly and the doped layer was buried by successive overlayer regrowth. From a depth profile of carriers using a...

  • One-dimensional GaAs wires fabricated by focused ion beam implantation. Hiramoto, Toshiro; Hirakawa, Kazuhiko; Iye, Yasuhiro; Ikoma, Toshiaki // Applied Physics Letters;11/16/1987, Vol. 51 Issue 20, p1620 

    We have developed a novel, simple technique for fabrication of one-dimensional GaAs wires by utilizing only a focused ion beam (FIB) technology. The FIB implantation forms high-resistive regions which confine an n+ channel into a very narrow conductive wire. The minimum width of the GaAs wire...

  • High power cw operation of GaAs/GaAlAs surface-emitting lasers mounted in the junction-up.... Ou, S.S.; Jansen, M.; Yang, J.J.; Sergant, M. // Applied Physics Letters;8/26/1991, Vol. 59 Issue 9, p1037 

    Demonstrates the operation of a GaAs/GaAlAs surface-emitting laser mounted in the junction-up configuration. Fabrication of the device mirrors by ion beam etching and reactive ion beam etching; Measurement of the typical threshold current density and external differential efficiencies from the...

  • Electrically active defect centers induced by Ga[sup +] focused ion beam irradiation of GaAs(100). Brown, S.J.; Rose, P.D.; Jones, G.A.C.; Linfield, E.H.; Ritchie, D.A. // Applied Physics Letters;1/25/1999, Vol. 74 Issue 4, p576 

    Examines electrically active defect centers induced by gallium (Ga[sup+]) focused ion beam irradiation of gallium arsenic (GaAs). Identification of defect centers identified as electron traps lying below the surface state conduction band; Absence of significant surface damage indicative of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics