TITLE

Paramagnetic center in porous silicon: A dangling bond with C[sub 3v] symmetry

AUTHOR(S)
Uchida, Yoshishige; Koshida, Nobuyoshi
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/16/1993, Vol. 63 Issue 7, p961
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the paramagnetic centers in self-supporting porous silicon (Si) films formed by anodization of Si(100) and (111) wafers. Use of x-band electron paramagnetic resonance (EPR); Maintenance of a silicon crystallinity in the as-anodized porous silicon surface; Interpretation of the angular dependence of EPR absorption lines.
ACCESSION #
4258252

 

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