TITLE

Assessment of implantation damage by backscatter Kikuchi diffraction in the scanning electron

AUTHOR(S)
Troost, K.Z.
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/16/1993, Vol. 63 Issue 7, p958
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the effectiveness of backscatter Kikuchi diffraction (BKD) method in the scanning electron microscope to investigate surface damage caused by ion implantation of silicon(100) materials. Use of standard image processing operations; Sensitivity of the technique in measuring the surface profile; Comparison between BKD and Rutherford backscattering spectrometry.
ACCESSION #
4258251

 

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