Assessment of implantation damage by backscatter Kikuchi diffraction in the scanning electron

Troost, K.Z.
August 1993
Applied Physics Letters;8/16/1993, Vol. 63 Issue 7, p958
Academic Journal
Examines the effectiveness of backscatter Kikuchi diffraction (BKD) method in the scanning electron microscope to investigate surface damage caused by ion implantation of silicon(100) materials. Use of standard image processing operations; Sensitivity of the technique in measuring the surface profile; Comparison between BKD and Rutherford backscattering spectrometry.


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