TITLE

High-conductance, low-leakage diamond Schottky diodes

AUTHOR(S)
Geis, M.W.; Efremow, N.N.
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/16/1993, Vol. 63 Issue 7, p952
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the use of Schottky diodes to characterize the electrical properties of diamond. Formation of aluminum, gold and mercury diodes on diamonds; Use of plasma treatment and thermal annealing; Surface leakage in the plasmas formed from several gases; Effect of diamond annealing at 660 degree Celsius on forward conductance.
ACCESSION #
4258249

 

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