TITLE

Control of interface stoichiometry in InAs/GaSb superlattices grown by molecular beam epitaxy

AUTHOR(S)
Bennett, Brian R.; Shanabrook, B.V.
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/16/1993, Vol. 63 Issue 7, p949
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the interface stoichiometry in indium arsenide/gallium antimonide superlattices grown by molecular beam epitaxy. Use of migration enhanced epitaxial techniques to prepare superlattices with indium antimonide and gallium arsenide-like interfaces; Factors allowing the use of x-ray diffraction and Raman spectroscopy to probe the structures.
ACCESSION #
4258248

 

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