Observation of the valence-subband level crossing in GaAs/GaAsP strained-barrier quantum well

Ota, Kazunobu; Yaguchi, Hiroyuki
August 1993
Applied Physics Letters;8/16/1993, Vol. 63 Issue 7, p946
Academic Journal
Examines the valence-subband level configuration in gallium arsenide/GaAsP strained barrier quantum wells as a well width function. Crossover behavior between the heavy- and light-hole states around the well width of 4 nanometer; Use of circularly polarized photoluminescence excitation spectroscopy; Indication of the polarization properties in the hole states.


Related Articles

  • Influence of Valence Band Offset on Carrier lifetime and Lasing Threshold in Compressive-strained InGaAs Quantum Well Lasers Grown on GaAs. Susaki, Wataru; Tanaka, Masashi; Kakuda, Shinich; Yoshimi, Akio; Tomioka, Akihiro // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p407 

    Carrier lifetime in InxGa1-xAs (x=0.2, 0.25, 0.3) quantum well laser with InGaAsP (Eg=1.55, 1.59eV) barrier/waveguide layers is longer than that in InxGa1-xAs (x=0.14, 0.18, 031) quantum well lasers with GaAs (Eg=1.42eV) barrier/waveguide layers, which is because of the higher injection ratio...

  • Gating of InAs/GaSb quantum wells using a silicon monoxide gate insulator. Rahman, F.; Gallagher, B. L.; Behet, M.; De Boeck, J. // Applied Physics Letters;7/6/1998, Vol. 73 Issue 1 

    We report on a technique we have recently developed to fabricate very high quality gates and gated structures on InAs/Al[sub x]Ga[sub 1-x]Sb quantum wells. The low thermal budget process leads to highly stable gates with extremely low leakage currents. Both electron and hole concentrations can...

  • Optical transitions between light hole subbands in InGaAs/InP strained layer multiquantum wells. Ilouz, I.; Oiknine-Schlesinger, J. // Applied Physics Letters;4/24/1995, Vol. 66 Issue 17, p2268 

    Observes the light hole intersubbands transitions in both p-doped and photoexcited undoped strained indium gallium arsenide/indium phosphide multi-quantum well structures. Polarization of the absorption along the growth direction; Identification of impurity bound and free holes transitions;...

  • Subband dispersion of holes in AlAs/In[sub 0.10]Ga[sub 0.90]As/AlAs strained-layer quantum wells.... Lin, S.Y.; Zaslavsky, A. // Applied Physics Letters;2/3/1992, Vol. 60 Issue 5, p601 

    Determines the subband dispersion of holes in double-barrier aluminum arsenide/indium[sub 0.10]gallium[sub 0.90]arsenide/aluminum arsenide strained-layer quantum wells. Analysis of the resonant magnetotunneling of holes; Observation of mass reversal, nonparabolicity and anticrossing; Lack of...

  • Theoretical gain in compressive and tensile strained InGaAs/InGaAsP quantum wells. Corzine, S.W.; Coldren, L.A. // Applied Physics Letters;7/29/1991, Vol. 59 Issue 5, p588 

    Reports theoretical predictions of gain in strained indium gallium arsenide/indium gallium arsenic phosphide quantum wells. Determination of the valence subband structure; Alteration of the optical gain of the quantum well; Calculation of the peak material gain as a function of carrier density.

  • An investigation of energy-band offsets in the ZnSe/Zn[sub 1-x]Mg[sub x]S[sub y]Se[sub 1-y].... Shanhzad, K.; Petruzzello, J. // Applied Physics Letters;7/31/1995, Vol. 67 Issue 5, p659 

    Analyzes optical data from ZnSe strained-layer quantum wells surrounded by barrier layers to extract the band offsets. Implication of including ground state transitions in the analysis; Analysis of offsets based on 6 K photoluminescence excitation; Sensitivity of holes to valence band offset.

  • Studies of Mn valence conversion and oxygen vacancies in La[sub 1-x]Ca[sub x]MnO[sub 3]-y].... Wang, Z.L.; Yin, J.S. // Applied Physics Letters;6/23/1997, Vol. 70 Issue 25, p3362 

    Examines the manganese valence conversion and oxygen vacancies in the oxide La[sub 1-x]Ca[sub x]MnO[sub 3-y]. Use of electron energy-loss spectroscopy in a transmission electron microscope; Ratio of manganese[sup 4+] to manganese[sup 3+] in a nominal doping composition; Factors affecting the...

  • Negative absolute mobility of holes in n-doped GaAs quantum wells. Höpfel, R. A.; Shah, J.; Wolff, P. A.; Gossard, A. C. // Applied Physics Letters;9/8/1986, Vol. 49 Issue 10, p572 

    We observe the effect of negative absolute mobility for minority holes in n-modulation-doped GaAs quantum wells at low temperatures. Photoinjected minority holes drift towards the positive electrode, which is shown experimentally using a photoluminescence imaging technique. The effect is...

  • Optical evidences of assisted tunneling in a biased double quantum well structure. Liu, H. W.; Ferreira, R.; Bastard, G.; Delalande, C.; Palmier, J. F.; Etienne, B. // Applied Physics Letters;5/22/1989, Vol. 54 Issue 21, p2082 

    Experimental evidences of electron and hole resonant tunnelings are obtained in a biased double quantum well system using optical methods. Calculations of the defect-induced tunneling rates are performed and compared with experiments.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics