TITLE

Observation of the valence-subband level crossing in GaAs/GaAsP strained-barrier quantum well

AUTHOR(S)
Ota, Kazunobu; Yaguchi, Hiroyuki
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/16/1993, Vol. 63 Issue 7, p946
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the valence-subband level configuration in gallium arsenide/GaAsP strained barrier quantum wells as a well width function. Crossover behavior between the heavy- and light-hole states around the well width of 4 nanometer; Use of circularly polarized photoluminescence excitation spectroscopy; Indication of the polarization properties in the hole states.
ACCESSION #
4258247

 

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