TITLE

Comparison of microsecond photoluminescence decay between as-prepared and dry-oxidized porous Si

AUTHOR(S)
Takazawa, Akira; Tamura, Tetsuro
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/16/1993, Vol. 63 Issue 7, p940
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Compares the microsecond photoluminescence (PL) decay between as-prepared and dry-oxidized porous silicon following a nitrogen pulse laser excitation. Changes in the PL lifetime and emission energy in as-prepared samples; Role of luminescence centers in determining PL mechanism; Exclusion of recombination due to nonradiative tunneling.
ACCESSION #
4258245

 

Related Articles

  • Photoluminescence in porous silicon produced as a result of intense laser excitation. Shatkovskii, E.; Vertsinskii, Ya. // Semiconductors;May97, Vol. 31 Issue 5, p503 

    The integrated photoluminescence in porous p-type silicon produced as a result of intense excitation with second harmonic (?=532 nm) pulses from a YAG:Nd[sup 3+] laser has been investigated. It was established that in the intensity range corresponding to quasistationary excitation conditions the...

  • Evidence for oxide formation from the single and multiphoton excitation of a porous silicon... Gole, James L.; Dixon, David A. // Journal of Applied Physics;6/1/1998 Part 1 of 2, Vol. 83 Issue 11, p5985 

    Presents information on a study which examined the formation of oxides monitored by single and multiphoton excitation, and its relation with the laser induced photoluminescence from nanoparticles. Details on the porous silicon (PS) surface; Oxidation of the PS surface bond SiHx moieties;...

  • Effect of a Fullerene Coating on the Photoluminescence of Porous Silicon. Sreseli, O.M.; Goryachev, D.N.; Belyakov, L.V.; Vul', S.P.; Zakharova, I.B.; Alekseeva, E.A. // Semiconductors;Jan2004, Vol. 38 Issue 1, p120 

    The interaction of a matrix of silicon nanocrystallites (porous silicon layer) with embedded fullerene molecules C[sub 60] was studied. The degradation of fullerene-containing layers as a result of irradiation with a strongly absorbed laser light was explored. It is shown that the layers with...

  • Strong visible photoluminescence from Ge/porous Si structure. Gao, Ting; Tong, Song; Zheng, Xiangqin; Wu, Xinglong; Wang, Liming; Bao, Ximao // Applied Physics Letters;6/22/1998, Vol. 72 Issue 25 

    Strong visible photoluminescence was observed on Ge/porous silicon structure prepared by pulsed laser deposition of Ge on porous Si. The photoluminescence spectrum shows three subbands peaked at 400, 620, and 720 nm, respectively. The 400 nm peak was ascribed to GeO color centers, and the 720 nm...

  • Enhancement of the blue photoluminescence intensity for the porous silicon with HfO2 filling into microcavities. Jiang, Ran; Du, Xianghao; Sun, Weideng; Han, Zuyin; Wu, Zhengran // Scientific Reports;10/30/2015, p15574 

    With HfO2 filled into the microcavities of the porous single-crystal silicon, the blue photoluminescence was greatly enhanced at room temperature. On one hand, HfO2 contributes to the light emission with the transitions of the defect levels for oxygen vacancy. On the other hand, the special...

  • Influence of physical and chemical surface treatment on the photoluminescence of porous silicon. Maronchuk, I. E.; Naidenkov, M. N.; Naidenkova, M. V.; Sarikov, A. V.; Voloshina, T. L. // Technical Physics;Jan99, Vol. 44 Issue 1, p122 

    It is shown that surface treatment of porous silicon in inorganic acids and solutions of metal chlorides leads to an increase in the intensity of photoluminescence of this material. In the case of chlorides, a short-wavelength shift of the photoluminescence maximum is also observed. The effect...

  • Reversible and irreversible changes in the photoluminescence spectra of porous silicon held in water. Dzhumaev, B. R. // Semiconductors;Nov99, Vol. 33 Issue 11, p1247 

    The change induced in the photoluminescence spectra and photoluminescence excitation spectra by holding porous silicon in water is investigated. It is found that submerging a sample in water gives rise simultaneously to reversible and irreversible changes in the intensity and position of the...

  • Using the temperature-dependent photovoltage to investigate porous silicon/silicon structures. Venger, E. F.; Kaganovich, �. B.; Kirillova, S. I.; Manoilov, �. G.; Primachenko, V. E.; Svechnikov, S. V. // Semiconductors;Nov99, Vol. 33 Issue 11, p1202 

    Structures based on porous silicon por-Si/p-Si, both freshly prepared by chemical etching and aged, exhibit a temperature-dependent photovoltage at high levels of electron-hole pair generation by pulse trains of red and white light. These structures are investigated by measuring this...

  • Observation of persistent photoluminescence in porous silicon: Evidence of surface emission. Fan, J. C.; Chen, C. H.; Chen, Y. F. // Applied Physics Letters;3/30/1998, Vol. 72 Issue 13 

    We report on the observation of persistent photoluminescence (PPL) in oxidized porous silicon. The PPL decay can be well described by a stretched-exponential function, and its decay rate is not sensitive to the change of temperature. We point out that the PPL behavior can be interpreted in terms...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics