Tunneling through Al[sub x]Ga[sub 1-x]As single barriers under hydrostatic pressure

Rossmanith, M.; Syassen, K.
August 1993
Applied Physics Letters;8/16/1993, Vol. 63 Issue 7, p937
Academic Journal
Examines the transport properties of Al[sub x]Ga[sub 1-x]As single barrier tunneling diodes under hydrostatic pressure. Use of the tunneling current pressure dependence for transport channel monitoring; Determination of the second channel barrier height; Observation of a crossover from the first to the second transport regime.


Related Articles

  • Resonant electron tunneling through defects in GaAs tunnel diodes. Jandieri, K.; Baranovskii, S. D.; Rubel, O.; Stolz, W.; Gebhard, F.; Guter, W.; Hermle, M.; Bett, A. W. // Journal of Applied Physics;Nov2008, Vol. 104 Issue 9, p094506 

    Current-voltage characteristics of GaAs tunnel diodes are studied experimentally and theoretically. In theoretical calculations contributions of three different transport mechanisms are considered: direct tunneling processes, nonresonant multiphonon tunneling processes via defects, and resonant...

  • The different characteristics for heavy- and light-hole resonant tunneling in Si1-xGex/Si double barrier structures. Shen, G. D.; Xu, D. X.; Willander, M.; Hansson, G. V. // Journal of Applied Physics;4/1/1992, Vol. 71 Issue 7, p3365 

    Proposes an approach developed to analyze the transport characteristics of resonant tunneling structures. Factors determining the resonant tunneling current; Effects to be considered for SiGe/silicon double barrier resonant tunneling structures; Comparisons between calculations and experiments.

  • Current transport characteristics of pSe-nMoSe2heterojunction diode. C. K. Sumesh; K. D. Patel; V. M. Pathak; R. Srivastava // European Physical Journal - Applied Physics;Nov2010, Vol. 52 Issue 12, p0 

    The characteristics of heterojunction diode pSe-nMoSe2fabricated from thermally evaporated p-Se films on n-type Molybdenum diselenide (MoSe2) grown by direct vapour transport (DVT) technique have been examined by using current-voltage measurements. To investigate the dark current transport...

  • Pressure studies of tunneling processes through a doped barrier. Suski, T.; Gschlossl, C.; Demmerle, W.; Smoliner, J.; Gornik, E.; Bohm, G.; Weimann, G. // Applied Physics Letters;11/4/1991, Vol. 59 Issue 19, p2436 

    Examines the influence of hydrostatic pressure on the tunneling processes between two-dimensional electron gas systems. Pressure dependence of the gallium arsenide effective mass; Linear pressure dependence for the electrons; Indication of inelastic scattering processes due to local phonon modes.

  • Reduced temperature sensitivity of the wavelength of a diode laser in a stress-engineered hydrostatic package. Cohen, Daniel A.; Heimbuch, Mark E.; Coldren, Larry A. // Applied Physics Letters;7/22/1996, Vol. 69 Issue 4, p455 

    By using the effects of increasing hydrostatic pressure to counteract the effects of rising temperature, we demonstrate a technique to stabilize the wavelength of an uncooled diode laser. We use the differential thermal expansion between various materials incorporated into the laser package to...

  • Hydrostatic pressure studies of GaAs tunnel diodes. Beji, L.; Jani, B. el; Gibart, P.; Portal, J.C.; Basmaji, P. // Journal of Applied Physics;5/15/1998, Vol. 83 Issue 10, p5573 

    Provides information on an experiment using hydrostatic pressure to investigate GaAs (doped with Zn and Sn in the p and n parts) tunnel diode I-V characteristics. Methodology used to conduct the study; Delimitation of diodes with an area of 0.12 mm2 by mesa etching; Explanation given for a...

  • High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 μm. Choulis, S. A.; Andreev, A.; Merrick, M.; Adams, A. R.; Murdin, B. N.; Krier, A.; Sherstnev, V. V. // Applied Physics Letters;2/24/2003, Vol. 82 Issue 8, p1149 

    The spontaneous electroluminescence emission of InAs light-emitting diodes (LEDs) operating at 3.3 μm was studied as a function of applied hydrostatic pressure. An enhancement of a factor of almost four in radiative efficiency at room temperature was observed in the range 0 to 10 kbar....

  • High-field interlayer tunnelling transport in layered cuprates: Uncovering the pseudogap state. Krusin-Elbaum, L.; Shibauchi, T. // European Physical Journal B -- Condensed Matter;Aug2004, Vol. 40 Issue 4, p445 

    In high temperature (highTc) cuprate superconductors the gap in the electronic density of states is not fully filled atTc; it evolves into a partial (pseudo)gap that survives way beyondTc, challenging the conventional views. We have investigated the pseudogap phenomenon in the field-temperature...

  • Room-temperature short-period transient grating measurement of perpendicular transport in.... Norwood, D.P.; Swoboda, H.-E.; Dawson, Martin D.; Smirl, Arthur L.; Andersen, D.R.; Hasenberg, T.C. // Applied Physics Letters;7/8/1991, Vol. 59 Issue 2, p219 

    Investigates the room-temperature perpendicular transport of gallium arsenide/aluminum gallium arsenide multiple quantum wells (QW). Range of QW barrier widths; Relation between grating decay rates and microscopic tunneling rates; Measurement of electron and hole grating decay rates.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics