TITLE

Defect control during solid phase epitaxial growth of SiGe alloy layers

AUTHOR(S)
Seongil Im; Washburn, Jack
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/16/1993, Vol. 63 Issue 7, p929
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines several processing procedures required for minimizing structural defects generated during the solid phase epitaxial growth of silicon germanide alloy layers. Reduction of end of range defect density by high dose ion implantation; Suppression of stacking fault formation by carbon sequential implantation; Characterization of layer structure and crystallinity.
ACCESSION #
4258241

 

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