TITLE

Evidence for hydrogen accumulation at strained layer heterojunctions

AUTHOR(S)
Sobiesierski, Z.; Clegg, J.B.
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/16/1993, Vol. 63 Issue 7, p926
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the effect of hydrogen (H) incorporation on strained In[sub x]Ga[sub 1-x]As/gallium arsenide quantum wells. Formation of shallow H-related radiative states competing and quenching intrinsic band-to-band luminescence; Use of secondary ion mass spectroscopy profiles; Association of H-related radiative states with accumulated H at well interfaces.
ACCESSION #
4258240

 

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