Transient velocity overshoot dynamics in GaAs for electric fields...200 kV/cm

Son, J.; Sha, W.
August 1993
Applied Physics Letters;8/16/1993, Vol. 63 Issue 7, p923
Academic Journal
Examines the transient velocity overshoot dynamics of photoexcited carriers in gallium arsenide semiconductors for electric fields. Proportionality of time domain waveforms with carrier velocity and acceleration; Electric field range needed for maximum overshoot degree; Effect of higher initial energy excitation of the carriers on overshoot degree.


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