Fabrication and Raman scattering studies of one-dimensional nanometer structures in (110) silicon

An-Shyang Chu; Zaidi, Saleem H.
August 1993
Applied Physics Letters;8/16/1993, Vol. 63 Issue 7, p905
Academic Journal
Presents a technique for fabricating large fields of uniform nanometer scale silicon semiconductor structures. Use of highly anisotropic etching rates of KOH:H[sub 2]O solution in silicon; Generation of uniform thick walls by standard interferometric lithography methods; Structure of the materials observed using the Raman scattering spectra.


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