Strong room-temperature photoluminescence of hydrogenated amorphous silicon oxide and its

Chi-Huei Lin; Si-Chen Lee
August 1993
Applied Physics Letters;8/16/1993, Vol. 63 Issue 7, p902
Academic Journal
Examines the room temperature photoluminescence (PL) of hydrogenated amorphous silicon oxide fabricated by plasma enhanced chemical vapor deposition. Effect of annealing treatments on PL; Comparison of PL characteristics between amorphous silicon oxide and porous silicon; Origin of the PL observed using an infrared spectra.


Related Articles

  • Optical properties of a Fabry-Pérot microcavity with Er-doped hydrogenated amorphous silicon active layer. Dukin, A. A.; Dukin, A.A.; Feoktistov, N. A.; Feoktistov, N.A.; Golubev, V. G.; Golubev, V.G.; Medvedev, A. V.; Medvedev, A.V.; Pevtsov, A. B.; Pevtsov, A.B.; Sel'kin, A. V.; Sel'kin, A.V. // Applied Physics Letters;11/6/2000, Vol. 77 Issue 19 

    Fabry-Pérot hydrogenated amorphous silicon (a-Si:H)/amorphous-SiO[sub x]:H microcavities with an erbium-doped a-Si:H active region are fabricated by a plasma-enhanced chemical-vapor deposition technique in a single technological cycle without exposure to air between the intermediate...

  • Excitation mechanism and thermal emission quenching of Tb ions in silicon rich silicon oxide thin films grown by plasma-enhanced chemical vapour deposition—Do we need silicon nanoclusters? Podhorodecki, A.; Golacki, L. W.; Zatryb, G.; Misiewicz, J.; Wang, J.; Jadwisienczak, W.; Fedus, K.; Wojcik, J.; Wilson, P. R. J.; Mascher, P. // Journal of Applied Physics;2014, Vol. 115 Issue 14, p143510-1 

    In this work, we will discuss the excitation and emission properties of Tb ions in a Silicon Rich Silicon Oxide (SRSO) matrix obtained at different technological conditions. By means of electron cyclotron resonance plasma-enhanced chemical vapour deposition, undoped and doped SRSO films have...

  • Hollow waveguides with low intrinsic photoluminescence fabricated with Ta2O5 and SiO2 films. Zhao, Y.; Jenkins, M.; Measor, P.; Leake, K.; Liu, S.; Schmidt, H.; Hawkins, A. R. // Applied Physics Letters;2/28/2011, Vol. 98 Issue 9, p091104 

    A type of integrated hollow core waveguide with low intrinsic photoluminescence fabricated with Ta2O5 and SiO2 films is demonstrated. Hollow core waveguides made with a combination of plasma-enhanced chemical vapor deposition SiO2 and sputtered Ta2O5 provide a nearly optimal structure for...

  • Silicon nanocluster-sensitized emission from erbium: The role of stress in the formation of silicon nanoclusters. Ahmad, I.; Temple, M. P.; Kallis, A.; Wojdak, M.; Oton, C. J.; Barbier, D.; Saleh, H.; Kenyon, A. J.; Loh, W. H. // Journal of Applied Physics;Dec2008, Vol. 104 Issue 12, p123108 

    Erbium-doped silicon-rich silicon oxide films deposited by plasma enhanced chemical vapor deposition suffer from compressive stress as deposited, which converts to a large tensile stress on annealing due to the release of hydrogen. Although the cracking that results from this stress can be...

  • Multi-mode interference revealed by two photon absorption in silicon rich SiO2 waveguides. Manna, S.; Ramiro-Manzano, F.; Ghulinyan, M.; Mancinelli, M.; Turri, F.; Pucker, G.; Pavesi, L. // Applied Physics Letters;2/11/2015, Vol. 106 Issue 7, p1 

    Photoluminescence (PL) from Si nanocrystals (NCs) excited by two-photon absorption (TPA) has been observed in Si nanocrystal-based waveguides fabricated by plasma enhanced chemical vapor deposition. The TPA excited photoluminescence emission resembles the one-photon excited photoluminescence...

  • Schottky contacts on amorphous carbon: A more reliable approach. Paul, S.; Clough, F. J. // Applied Physics Letters;3/5/2001, Vol. 78 Issue 10, p1415 

    It is considered impossible to form Schottky contacts on amorphous hydrogenated carbon (a-C:H). Taking the lead from our earlier work in which we report the formation of Schottky contacts on radio frequency plasma enhanced chemical vapor deposition (rf PECVD) grown a-C:H films, here we present a...

  • Stress hysteresis during thermal cycling of plasma-enhanced chemical vapor deposited silicon oxide films. Thurn, Jeremy; Cook, Robert F. // Journal of Applied Physics;2/15/2002, Vol. 91 Issue 4, p1988 

    The mechanical response of plasma-enhanced chemical vapor deposited SiO[sub 2] to thermal cycling is examined by substrate curvature measurement and depth-sensing indentation. Film properties of deposition stress and stress hysteresis that accompanied thermal cycling are elucidated, as well as...

  • Photoluminescence from nanocrystallites embedded in hydrogenated amorphous silicon films.... Xiang-na Liu; Xiao-wei Wu; Xi-mao Bao; Yu-liang He // Applied Physics Letters;1/10/1994, Vol. 64 Issue 2, p220 

    Examines the visible photoluminescence at room temperature of nanocrystallites in hydrogenated amorphous silicon films. Preparation of films by plasma enhanced chemical vapor deposition using hydrogen-diluted silane; Influence of quantum size effect on emission above the band gap;...

  • Pressure influence on the decay of the photoluminescence in Si nanopowder grown by.... Roura, P.; Costa, J. // Applied Physics Letters;11/6/1995, Vol. 67 Issue 19, p2830 

    Examines the influence of pressure on the decay of photoluminescence in silicon nanopowder grown by plasma enhanced chemical vapor deposition. Salient characteristics between gas interaction and emitting centers; Analysis with different inert gases; Comparison with other nanostructured silicon...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics