TITLE

Observation of Ga antisite defect in electron-irradiated semi-insulating GaAs by photoluminescence

AUTHOR(S)
Kuriyama, K.; Yokoyama, K.
PUB. DATE
August 1992
SOURCE
Applied Physics Letters;8/17/1992, Vol. 61 Issue 7, p843
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines cation antisite defects produced in semi-insulating gallium arsenide (GaAs) by 30-millielectron volt electron irradiation using photoluminescence method. Role of antisite defects in the compensation mechanism of GaAs; Estimation of the maximum energy transfer to the target atom; Size of the electron induced defect.
ACCESSION #
4258205

 

Related Articles

  • Robustness of n-GaAs carrier spin properties to 5 MeV proton irradiation. Pursley, Brennan C.; Song, X.; Torres-Isea, R. O.; Bokari, E. A.; Kayani, A.; Sih, V. // Applied Physics Letters;2/11/2015, Vol. 106 Issue 7, p1 

    Modern electronic devices utilize charge to transmit and store information. This leaves the information susceptible to external influences, such as radiation, that can introduce short timescale charge fluctuations and, long term, degrade electronic properties. Encoding information as spin...

  • Effect of growth temperature on photoluminescence of GaNas/GaAs quantum well structures. Buyanova, I. A.; Chen, W. M. // Applied Physics Letters;12/13/1999, Vol. 75 Issue 24, p3781 

    Studies the effect of growth temperature on the optical properties of gallium arsenide (GaAs)/gallium nitrogen arsenide (GaNAs) quantum wells using photoluminescence spectroscopies. Growth temperature; Optical quality of the structures; Observed increase in intensity of the GaNAs-related...

  • Minority-carrier lifetime study of the pressure induced Γ-X crossover in GaAs. Leroux, M.; Pelous, G.; Raymond, F.; Verie, C. // Applied Physics Letters;2/1/1985, Vol. 46 Issue 3, p288 

    Room-temperature continuous and time-resolved (on a nanosecond scale) photoluminescence experiments have been performed on p-type GaAs. Observation of indirect luminescence in GaAs above 4 GPa allowed a direct determination of the room-temperature pressure coefficient of the X[sup c, sub 1]...

  • Low pressure organometallic vapor phase epitaxial growth of device quality GaAs directly on (100) Si. Shastry, S. K.; Zemon, S. // Applied Physics Letters;8/25/1986, Vol. 49 Issue 8, p467 

    The epitaxial growth and properties of GaAs layers directly deposited on (100) Si substrates using a low-temperature process are reported. The GaAs layers were grown by organometallic vapor phase epitaxy with a two-step process and without any high-temperature heat treatment of the Si...

  • Gallium arsenide photoluminescence under picosecond-laser-driven shock compression. Lu, X. Z.; Garuthara, R.; Lee, S.; Alfano, R. R. // Applied Physics Letters;1/11/1988, Vol. 52 Issue 2, p93 

    A pump-and-probe technique was used to investigate shock effects on the photoluminescence spectra (∼833 nm) at T=80 K due to the direct transition E0 from the Γ6 conduction band to the Γ8 fourfold degenerate top valence band in GaAs. Under the shock loading condition, the...

  • Response to ‘‘Comment on ‘Laser-induced degradation of GaAs photoluminescence’ ’’ [Appl. Phys. Lett. 53, 927 (1988)]. Raja, M. Y. A.; Brueck, S. R. J.; Osinski, M.; McInerney, J. // Applied Physics Letters;9/5/1988, Vol. 53 Issue 10, p927 

    Responds to comments made by Daniel Guidotti and Harold J. Hovel on the article 'Laser-induced degradation of GaAs photoluminescence,' published in the periodical 'Applied Physics Letters.' Experimental observations on high- and low-resistivity GaAs; Surface recombination-enhanced defect...

  • Comment on ‘‘Laser-induced degradation of GaAs photoluminescence’’ [Appl. Phys. Lett. 52, 625 (1988)]. Guidotti, Daniel; Hovel, Harold J. // Applied Physics Letters;9/5/1988, Vol. 53 Issue 10, p927 

    Comments on the article 'Laser-induced degradation of GaAs photoluminescence (PL),' published in the periodical 'Applied Physics Letters.' Conclusion that PL degradation in the samples is not purely a surface effect; Experimental evidence for the conclusion.

  • Model for degradation of band-gap photoluminescence in GaAs. Guidotti, Daniel; Hovel, Harold J. // Applied Physics Letters;10/10/1988, Vol. 53 Issue 15, p1411 

    A recombination-enhanced defect reaction model is described. It is based on nonradiative recombination of photoexcited carriers at particular crystal defect sites near a semiconductor surface. The model is general and correctly predicts, with only one adjustable parameter, the photoluminescence...

  • Temperature effects on the photoluminescence of GaAs grown on Si. Chen, Y.; Freundlich, A.; Kamada, H.; Neu, G. // Applied Physics Letters;1/2/1989, Vol. 54 Issue 1, p45 

    Photoluminescence properties of as-grown and post-growth annealed GaAs directly grown on Si substrates by metalorganic vapor phase epitaxy are studied at various temperatures. At low temperature, three extrinsic lines and an intrinsic exciton line split by residual biaxial tensile stress are...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics