Characterization of a GaAs/AlGaAs modulation-doped dynamic random access memory cell

Kleine, J.S.; Cooper Jr., J.A.
August 1992
Applied Physics Letters;8/17/1992, Vol. 61 Issue 7, p834
Academic Journal
Explores the electrical properties of a gallium arsenide/aluminum gallium arsenide dynamic random access memory cell. Description of the storage capacitor and the access transistor of the cell; Exhibition of experimental waveforms; Presence of the inversion charge at the interface.


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