Determination of low temperature impact ionization coefficients in GaAs by

Cockburn, J.W.; Skolnick, M.S.
August 1992
Applied Physics Letters;8/17/1992, Vol. 61 Issue 7, p825
Academic Journal
Measures the absolute intensity of electroluminescence (EL) due to impact ionization in n-type gallium arsenide/aluminum gallium arsenide single barrier tunneling structures. Values for the impact ionization coefficient for electrons in GaAs; Establishment of the EL studies as a reliable quantitative probe of impact ionization phenomena.


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