Lateral band-gap patterning and carrier confinement in InGaAs/GaAs quantum wells grown by

Krahl, M.; Kapon, E.
August 1992
Applied Physics Letters;8/17/1992, Vol. 61 Issue 7, p813
Academic Journal
Examines the two-dimensional lateral band-gap patterning and carrier confinement in indium gallium arsenide/gallium arsenide patterned quantum well dots. Production of the quantum well dots by molecular beam epitaxy; Electrical and optical properties of quantum dot semiconductor heterostructures; Origin of the spectral features across the dot pattern.


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