Anisotropic strain relaxation in GaAs layers grown on Si(100) substrates by post-growth patterning

Tsukamoto, Nobuo; Yazawa, Yoshiaki
August 1992
Applied Physics Letters;8/17/1992, Vol. 61 Issue 7, p810
Academic Journal
Investigates the anisotropic strain relaxation in gallium arsenide (GaAs) layers grown on silicon substrates by post-growth patterning. Photoluminescence (PL) measurements of the strain relaxation; Information on the peak position of GaAs PL spectrum at shorter wavelength; Reduction of the residual strain in the layers.


Related Articles

  • Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire. Tatebayashi, J.; Ota, Y.; Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y. // Applied Physics Letters;9/8/2014, Vol. 105 Issue 10, p1 

    We demonstrate a highly uniform, dense stack of In0.22Ga0.78As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs...

  • In situ strain relaxation comparison between GaAsBi and GaInAs grown by molecular-beam epitaxy. France, R.; Jiang, C.-S.; Ptak, A. J. // Applied Physics Letters;3/7/2011, Vol. 98 Issue 10, p101908 

    The strain relaxation of GaAsBi is studied in order to determine both the maximum thickness before dislocations form for various misfits and the potential of GaAsBi for usage in the compositionally graded buffer of lattice-mismatched devices. Low-misfit GaAsBi epilayers are grown and compared...

  • Light-emitting properties of a strain-tuned microtube containing coupled quantum wells. Zhen, H. L.; Huang, G. S.; Kiravittaya, S.; Li, S. L.; Deneke, Ch.; Thurmer, Dominic J.; Mei, Y. F.; Schmidt, O. G.; Lu, W. // Applied Physics Letters;1/28/2013, Vol. 102 Issue 4, p041109 

    Pre-stressed multi-layer nanomembranes are rolled-up into a microtube in order to tune the strain applied to the contained coupled GaAs quantum wells. Additional GaAs/AlAs adjusting layers were deposited on the top of the nanomembrane to alter the thickness/stiffness of the to-be-rolled...

  • Elastic strain relaxation in GaN–AlN–GaN semiconductor–insulator–semiconductor structures. Bykhovski, A. D.; Gelmont, B. L.; Shur, M. S. // Journal of Applied Physics;9/15/1995, Vol. 78 Issue 6, p3691 

    Presents a study that examined elastic strain relaxation in GaN-AIN-GaN seemiconductor-insulator-semiconductor structures. Method of the study; Results and discussion; Conclusion.

  • Elimination of thermally induced biaxial stress in GaAs on Si layers by post-growth patterning. van der Ziel, J. P.; Chand, Naresh; Weiner, J. S. // Journal of Applied Physics;8/1/1989, Vol. 66 Issue 3, p1195 

    Presents a study which reduced the biaxial tensile stress by post-growth patterning of the gallium arsenide. Experimental details; Stress exhibited by stripe and rectangular patterns; Conclusion.

  • Photoluminescence properties and high resolution x-ray diffraction investigation of BInGaAs/GaAs grown by the metalorganic vapour phase epitaxy method. Hamila, Radhia; Saidi, Faouzi; Maaref, Hassen; Rodriguez, Philippe; Auvray, Laurent // Journal of Applied Physics;Sep2012, Vol. 112 Issue 6, p063109 

    In this paper, we report the obtention of quaternary (B)InGaAs/GaAs alloys grown by metal organic vapour phase epitaxy has been studied using high resolution x ray diffraction (HRXRD) and photoluminescence (PL) measurements. HRXRD has been achieved to determine the indium fraction (35%)...

  • Diode lasers emitting at 1220 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate. Vinokurov, D.; Kapitonov, V.; Nikolaev, D.; Pikhtin, N.; Stankevich, A.; Shamakhov, V.; Bondarev, A.; Vavilova, L.; Tarasov, I. // Semiconductors;Oct2011, Vol. 45 Issue 10, p1364 

    Heterostructures with an active region containing a GaInAs quantum well located between GaAsP compensating layers were studied using photoluminescence spectroscopy. It was shown that an increase in the phosphorus content in compensating layers makes it possible to obtain unrelaxed...

  • Spatial imaging and mechanical control of spin coherence in strained GaAs epilayers. Knotz, H.; Holleitner, A. W.; Stephens, J.; Myers, R. C.; Awschalom, D. D. // Applied Physics Letters;6/12/2006, Vol. 88 Issue 24, p241918 

    The effect of uniaxial tensile strain on spin coherence in n-type GaAs epilayers is probed using time-resolved Kerr rotation, photoluminescence, and optically detected nuclear magnetic resonance spectroscopies. The band gap, electron spin lifetime, electron g factor, and nuclear quadrupole...

  • Direct Measure of Strain and Electronic Structure in GaAs/GaP Core-Shell Nanowires. Jackson, H. E.; Montazeri, M.; Fickenscher, M.; Smith, L. M.; Yarrison-Rice, J. M.; Kang, J. H.; Gao, Q.; Tan, H. H.; Jagadish, C.; Guo, Y.; Zou, J.; Pistol, M. E.; Pryor, C. E. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p477 

    We have studied core-shell nanowires with widely different core and shell lattice constants, namely GaAs core with GaP shell nanowires. We use Raman scattering to probe strain in these nanowires and relate this strain to the observed photoluminescence. The Raman and photoluminescence...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics