TITLE

Anisotropic strain relaxation in GaAs layers grown on Si(100) substrates by post-growth patterning

AUTHOR(S)
Tsukamoto, Nobuo; Yazawa, Yoshiaki
PUB. DATE
August 1992
SOURCE
Applied Physics Letters;8/17/1992, Vol. 61 Issue 7, p810
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the anisotropic strain relaxation in gallium arsenide (GaAs) layers grown on silicon substrates by post-growth patterning. Photoluminescence (PL) measurements of the strain relaxation; Information on the peak position of GaAs PL spectrum at shorter wavelength; Reduction of the residual strain in the layers.
ACCESSION #
4258193

 

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