Interface-trap generation induced by hot-hole injection at the Si-SiO[sub 2] interface

Ogawa, Shigeo; Shiono, Noboru
August 1992
Applied Physics Letters;8/17/1992, Vol. 61 Issue 7, p807
Academic Journal
Investigates the role of hot holes, hot electrons, and the recombination in interface-trap generation as the silicon-silica interface during hot-carrier injection. Emphasis on the dependence of roles on oxide thickness; Efficiency of hot holes; Damage caused by the carriers.


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