TITLE

Interface-trap generation induced by hot-hole injection at the Si-SiO[sub 2] interface

AUTHOR(S)
Ogawa, Shigeo; Shiono, Noboru
PUB. DATE
August 1992
SOURCE
Applied Physics Letters;8/17/1992, Vol. 61 Issue 7, p807
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the role of hot holes, hot electrons, and the recombination in interface-trap generation as the silicon-silica interface during hot-carrier injection. Emphasis on the dependence of roles on oxide thickness; Efficiency of hot holes; Damage caused by the carriers.
ACCESSION #
4258192

 

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