TITLE

Spectral blue shift of photoluminescence in strained-layer Si[sub 1-x]Ge[sub x]/Si quantum well

AUTHOR(S)
Fukatsu, S.; Yoshida, H.
PUB. DATE
August 1992
SOURCE
Applied Physics Letters;8/17/1992, Vol. 61 Issue 7, p804
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the spectral blue shift of photoluminescence in strained-layer Si[sub 1-x]Ge[sub x]/Si quantum well structure. Growth of the structures by gas-source silicon molecular beam epitaxy; Factors influencing the blue shift of exciton transition; Result of thermalization of holes to the silicon barriers.
ACCESSION #
4258191

 

Related Articles

  • Room-temperature photoluminescence times in a GaAs/AlxGa1-xAs molecular beam epitaxy multiple quantum well structure. Fouquet, J. E.; Siegman, A. E. // Applied Physics Letters;2/1/1985, Vol. 46 Issue 3, p280 

    Time-resolved photoluminescence measurements at room temperature of the n = 1 heavy hole transition in a GaAs/Al[sub x]Ga[sub 1-x] As multiple quantum well structure reveal a single-exponential decay with τ ≈ 1 ns over a wide range of excitation densities. Time-integrated...

  • Photoluminescence study of Si1-yCy/Si quantum well structures grown by molecular beam epitaxy. Brunner, K.; Eberl, K.; Winter, W.; Jin-Phillipp, N. Y. // Applied Physics Letters;7/1/1996, Vol. 69 Issue 1, p91 

    Low-temperature photoluminescence (PL) spectroscopy is applied to investigate pseudomorphic Si1-yCy/Si quantum well structures grown by solid-source molecular beam epitaxy on Si substrates. The influence of substrate temperature during growth, growth rate, C content, and layer width on PL...

  • Solid-immersion photoluminescence microscopy of carrier diffusion and drift in facet-growth GaAs quantum wells. Yoshita, Masahiro; Baba, Motoyoshi; Koshiba, Shyun; Sakaki, Hiroyuki; Akiyama, Hidefumi // Applied Physics Letters;11/16/1998, Vol. 73 Issue 20 

    Carrier diffusion and drift in facet-growth quantum wells (QWs) on mesa-patterned substrates by molecular beam epitaxy was studied by high-resolution microscopic photoluminescence spectroscopy and imaging using a solid immersion lens at low temperatures. Under point excitation,...

  • Graduated heterojunction in GaAs/AlAs quantum wells. Proctor, M.; Oelgart, G.; Rhan, H.; Reinhart, F.-K. // Applied Physics Letters;6/6/1994, Vol. 64 Issue 23, p3154 

    Examines the GaAs/AlAs multiple quantum wells grown by molecular beam epitaxy. Use of x-ray diffraction, photoluminescence excitation and emission; Generation of the well width and period fluctuation of multiple quantum wells; Transition energies of excitonic transitions.

  • Demonstration of quantum confinement in InSb-In[sub 1-x]Al[sub x]Sb multiquantum wells using.... Saker, M.K.; Whittaker, D.M. // Applied Physics Letters;8/29/1994, Vol. 65 Issue 9, p1118 

    Describes the observation of quantum confinement using photoluminescence in multiquantum well samples grown by molecular beam epitaxy. Examination of quantum well samples; Various concentration of aluminum in the barriers; Behavior of the upshifted luminescence energies; Potential of...

  • Spectral modulation of luminescence of strained Si[sub 1-x]Ge[sub x]/Si quantum wells in a.... Fukatsu, S.; Nayak, D.K. // Applied Physics Letters;12/12/1994, Vol. 65 Issue 24, p3039 

    Examines the integration of strained Si[sub 1-x]Ge[sub x]/silicon (Si) quantum wells in a vertical cavity on Si substrate using gas source Si molecular beam epitaxy. Observation of oscillation in photoluminescence excitation spectra; Maintenance of phase coherence in the cavity; Use of the...

  • Carbon impurity effects in Al-Ga interdiffused GaAs/AlAs multiple quantum wells. Oh, Y. T.; Kim, S. K.; Kim, Y. H.; Kang, T. W.; Hong, C. Y.; Kim, T. W. // Journal of Applied Physics;3/15/1995, Vol. 77 Issue 6, p2415 

    Presents information on a study which investigated the carbon impurity effects on the intermixing behavior of GaAs/AlAs multiple quantum wells grown by molecular-beam epitaxy using photoluminescence measurements. Annealing of the multiple-quantum wells; Experimental details; Results and...

  • Stimulated emission from a CdTe/HgCdTe separate confinement heterostructure grown by molecular beam epitaxy. Mahavadi, K. K.; Bleuse, J.; Sivananthan, S.; Faurie, J. P. // Applied Physics Letters;5/21/1990, Vol. 56 Issue 21, p2077 

    We present the results of low-temperature photoluminescence and stimulated emission experiments performed on a CdTe/Hg0.45Cd0.55Te/Hg0.67Cd0.33Te multiquantum well separate confinement heterostructure grown by molecular beam epitaxy. The photoluminescence results suggest that because of the...

  • Photoluminescence of high-quality SiGe quantum wells grown by molecular beam epitaxy.  // Applied Physics Letters;7/19/1993, Vol. 63 Issue 3, p376 

    Examines the photoluminescence (PL) of silicon germanium (SiGe) quantum wells (QW) grown by solid-source molecular beam epitaxy. Observation of well-resolved PL signals from SiGe QW; Employment of chemical vapor deposition technique for single or multiple QW; Influence of growth temperature...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics