Spectral blue shift of photoluminescence in strained-layer Si[sub 1-x]Ge[sub x]/Si quantum well

Fukatsu, S.; Yoshida, H.
August 1992
Applied Physics Letters;8/17/1992, Vol. 61 Issue 7, p804
Academic Journal
Examines the spectral blue shift of photoluminescence in strained-layer Si[sub 1-x]Ge[sub x]/Si quantum well structure. Growth of the structures by gas-source silicon molecular beam epitaxy; Factors influencing the blue shift of exciton transition; Result of thermalization of holes to the silicon barriers.


Related Articles

  • Room-temperature photoluminescence times in a GaAs/AlxGa1-xAs molecular beam epitaxy multiple quantum well structure. Fouquet, J. E.; Siegman, A. E. // Applied Physics Letters;2/1/1985, Vol. 46 Issue 3, p280 

    Time-resolved photoluminescence measurements at room temperature of the n = 1 heavy hole transition in a GaAs/Al[sub x]Ga[sub 1-x] As multiple quantum well structure reveal a single-exponential decay with τ ≈ 1 ns over a wide range of excitation densities. Time-integrated...

  • Photoluminescence study of Si1-yCy/Si quantum well structures grown by molecular beam epitaxy. Brunner, K.; Eberl, K.; Winter, W.; Jin-Phillipp, N. Y. // Applied Physics Letters;7/1/1996, Vol. 69 Issue 1, p91 

    Low-temperature photoluminescence (PL) spectroscopy is applied to investigate pseudomorphic Si1-yCy/Si quantum well structures grown by solid-source molecular beam epitaxy on Si substrates. The influence of substrate temperature during growth, growth rate, C content, and layer width on PL...

  • Solid-immersion photoluminescence microscopy of carrier diffusion and drift in facet-growth GaAs quantum wells. Yoshita, Masahiro; Baba, Motoyoshi; Koshiba, Shyun; Sakaki, Hiroyuki; Akiyama, Hidefumi // Applied Physics Letters;11/16/1998, Vol. 73 Issue 20 

    Carrier diffusion and drift in facet-growth quantum wells (QWs) on mesa-patterned substrates by molecular beam epitaxy was studied by high-resolution microscopic photoluminescence spectroscopy and imaging using a solid immersion lens at low temperatures. Under point excitation,...

  • Graduated heterojunction in GaAs/AlAs quantum wells. Proctor, M.; Oelgart, G.; Rhan, H.; Reinhart, F.-K. // Applied Physics Letters;6/6/1994, Vol. 64 Issue 23, p3154 

    Examines the GaAs/AlAs multiple quantum wells grown by molecular beam epitaxy. Use of x-ray diffraction, photoluminescence excitation and emission; Generation of the well width and period fluctuation of multiple quantum wells; Transition energies of excitonic transitions.

  • Demonstration of quantum confinement in InSb-In[sub 1-x]Al[sub x]Sb multiquantum wells using.... Saker, M.K.; Whittaker, D.M. // Applied Physics Letters;8/29/1994, Vol. 65 Issue 9, p1118 

    Describes the observation of quantum confinement using photoluminescence in multiquantum well samples grown by molecular beam epitaxy. Examination of quantum well samples; Various concentration of aluminum in the barriers; Behavior of the upshifted luminescence energies; Potential of...

  • Spectral modulation of luminescence of strained Si[sub 1-x]Ge[sub x]/Si quantum wells in a.... Fukatsu, S.; Nayak, D.K. // Applied Physics Letters;12/12/1994, Vol. 65 Issue 24, p3039 

    Examines the integration of strained Si[sub 1-x]Ge[sub x]/silicon (Si) quantum wells in a vertical cavity on Si substrate using gas source Si molecular beam epitaxy. Observation of oscillation in photoluminescence excitation spectra; Maintenance of phase coherence in the cavity; Use of the...

  • Carbon impurity effects in Al-Ga interdiffused GaAs/AlAs multiple quantum wells. Oh, Y. T.; Kim, S. K.; Kim, Y. H.; Kang, T. W.; Hong, C. Y.; Kim, T. W. // Journal of Applied Physics;3/15/1995, Vol. 77 Issue 6, p2415 

    Presents information on a study which investigated the carbon impurity effects on the intermixing behavior of GaAs/AlAs multiple quantum wells grown by molecular-beam epitaxy using photoluminescence measurements. Annealing of the multiple-quantum wells; Experimental details; Results and...

  • Stimulated emission from a CdTe/HgCdTe separate confinement heterostructure grown by molecular beam epitaxy. Mahavadi, K. K.; Bleuse, J.; Sivananthan, S.; Faurie, J. P. // Applied Physics Letters;5/21/1990, Vol. 56 Issue 21, p2077 

    We present the results of low-temperature photoluminescence and stimulated emission experiments performed on a CdTe/Hg0.45Cd0.55Te/Hg0.67Cd0.33Te multiquantum well separate confinement heterostructure grown by molecular beam epitaxy. The photoluminescence results suggest that because of the...

  • Photoluminescence of high-quality SiGe quantum wells grown by molecular beam epitaxy.  // Applied Physics Letters;7/19/1993, Vol. 63 Issue 3, p376 

    Examines the photoluminescence (PL) of silicon germanium (SiGe) quantum wells (QW) grown by solid-source molecular beam epitaxy. Observation of well-resolved PL signals from SiGe QW; Employment of chemical vapor deposition technique for single or multiple QW; Influence of growth temperature...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics