Optical properties of InGaAs films embedded in plasma etched InP wells

Georgakilas, A.; Christou, A.
August 1992
Applied Physics Letters;8/17/1992, Vol. 61 Issue 7, p798
Academic Journal
Examines the optical properties of indium gallium arsenide films embedded in plasma etched indium phosphide wells. Growth of the films by molecular beam epitaxy; Comparison of the properties between InGaAs films and films grown on nonpatterned InP substrates; Maintenance of the exciton features of the photoluminescence spectra.


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