TITLE

Optical properties of InGaAs films embedded in plasma etched InP wells

AUTHOR(S)
Georgakilas, A.; Christou, A.
PUB. DATE
August 1992
SOURCE
Applied Physics Letters;8/17/1992, Vol. 61 Issue 7, p798
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the optical properties of indium gallium arsenide films embedded in plasma etched indium phosphide wells. Growth of the films by molecular beam epitaxy; Comparison of the properties between InGaAs films and films grown on nonpatterned InP substrates; Maintenance of the exciton features of the photoluminescence spectra.
ACCESSION #
4258189

 

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