Difference of the electrical properties of screw and 60 degree dislocations in silicon as

Kusanagi, Susumu; Sekiguchi, Takashi
August 1992
Applied Physics Letters;8/17/1992, Vol. 61 Issue 7, p792
Academic Journal
Investigates the difference in the electrical properties of screw and 60 degree dislocations in silicon. Advantages of the electron beam induced current technique; Effect of metallic impurities on the recombination activity of a dislocation; Introduction of defects by plastic deformation of a crystal at a high temperature.


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