TITLE

Difference of the electrical properties of screw and 60 degree dislocations in silicon as

AUTHOR(S)
Kusanagi, Susumu; Sekiguchi, Takashi
PUB. DATE
August 1992
SOURCE
Applied Physics Letters;8/17/1992, Vol. 61 Issue 7, p792
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the difference in the electrical properties of screw and 60 degree dislocations in silicon. Advantages of the electron beam induced current technique; Effect of metallic impurities on the recombination activity of a dislocation; Introduction of defects by plastic deformation of a crystal at a high temperature.
ACCESSION #
4258187

 

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