TITLE

Electron mobility and Si incorporation in In[sub x]Ga[sub 1-x]As layers grown on GaAs by

AUTHOR(S)
Ekenstedt, M.J.; Songpongs, P.
PUB. DATE
August 1992
SOURCE
Applied Physics Letters;8/17/1992, Vol. 61 Issue 7, p789
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates electron mobility and silicon incorporation in In[sub x]Ga[sub 1-x]As layers grown on gallium arsenide by molecular beam epitaxy. Use of Hall effect to measure electron mobility; Dependence of mobility on composition; Discussion on the effect of space charge scattering.
ACCESSION #
4258186

 

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