Electron mobility and Si incorporation in In[sub x]Ga[sub 1-x]As layers grown on GaAs by

Ekenstedt, M.J.; Songpongs, P.
August 1992
Applied Physics Letters;8/17/1992, Vol. 61 Issue 7, p789
Academic Journal
Investigates electron mobility and silicon incorporation in In[sub x]Ga[sub 1-x]As layers grown on gallium arsenide by molecular beam epitaxy. Use of Hall effect to measure electron mobility; Dependence of mobility on composition; Discussion on the effect of space charge scattering.


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