TITLE

# Effect of crystallographic alignment of isolation trenches: A resolved-shear-stress perspective

AUTHOR(S)
Hu, S.M.; Chidambarrao, D.
PUB. DATE
August 1992
SOURCE
Applied Physics Letters;8/17/1992, Vol. 61 Issue 7, p783
SOURCE TYPE
DOC. TYPE
Article
ABSTRACT
Analyzes the effect of crystallographic alignment of isolation trenches. Selection of glide system exhibiting the highest stress level; Calculation of the stress fields in silicon; Factors possibly causing the reduction of dislocation density.
ACCESSION #
4258184

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