Low-threshold InGaAs strained-layer quantum well lasers (lambda=0.98 mum) with GaInP cladding

Tsang, W.T.; Kapre, R.
August 1992
Applied Physics Letters;8/17/1992, Vol. 61 Issue 7, p755
Academic Journal
Examines the indium gallium arsenide/gallium arsenide/gallium indium phosphide strained-layer quantum well lasers grown by chemical beam epitaxy. Confinement of electrical carriers and optical fields; Determination of the internal quantum efficiency and internal waveguide losses; Effect of substrate growth temperature on morphology.


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