Raman spectroscopic assessment of carbon-hydrogen pairs in carbon-doped GaAs layers

Wagner, J.; Maier, M.
May 1992
Applied Physics Letters;5/18/1992, Vol. 60 Issue 20, p2546
Academic Journal
Demonstrates Raman spectroscopic assessment of carbon-hydrogen pairs in carbon-doped gallium arsenide layers. Factors attributed to a strong resonant enhancement of incident photon energies; Range of the detection limit; Application of local vibrational mode absorption spectroscopy; Discussion on the possible mechanism of the resonance behavior.


Related Articles

  • InAs island-induced-strain driven adatom migration during GaAs overlayer growth. Qianghua Xie; Chen, P. // Applied Physics Letters;10/17/1994, Vol. 65 Issue 16, p2051 

    Focuses on the impact of indium arsenide island induced strain fields on adatom migration during subsequent gallium arsenide cap layer growth. Presence of strain dominated atom migration away from the islands; Anisotropy in the length scale of impact between directions; Formulation of the...

  • Arsine flow requirement for the flow modulation growth of high purity GaAs using adduct-grade.... Pitts, B.L.; Emerson, D.T.; Shealy, J.R. // Applied Physics Letters;10/26/1992, Vol. 61 Issue 17, p2054 

    Examines the production of high purity gallium arsenide layers with V/III molar ratios by organometallic vapor phase epitaxy using arsine and triethylgallium with flow modulation. Range of layer thickness; Estimation of the total impurity concentrations; Need to eliminate carbon from the...

  • Photoluminescence-dark-spot-free AlGaAs grown on Si substrate. Wada, Naoki; Iwabu, Koichi // Applied Physics Letters;3/16/1992, Vol. 60 Issue 11, p1354 

    Examines the growth of gallium arsenide (GaAs) and aluminum gallium arsenide layers on an undercut gallium arsenide on silicon. Separation of a part of the GaAs from the substrate; Characterization of the grown lasers by photoluminescence image; Absence of dark spot; Factors influencing the...

  • Improved composition homogeneity during selective area epitaxy of GaInAs using a novel In precursor. Eckel, M.; Ottenwalder, D. // Applied Physics Letters;2/14/1994, Vol. 64 Issue 7, p854 

    Investigates the properties of two indium precursors with respect to selectivity and variation of composition of selectively grown gallium indium arsenide layers. Use of metalorganic vapor phase epitaxy for structural growth on partially masked substrate; Differentiation between the two sources...

  • Correlation between the signs of the magnetoresistance and of the interlayer coupling in.... Van Roy, W.; Akinaga, H. // Applied Physics Letters;8/18/1997, Vol. 71 Issue 7, p971 

    Examines the correlation between the signs of magnetoresistance and interlaying coupling in MnGa/(Mn,Ga,As)/MnGa trilayers. Details on the ferromagnetic and antiferromagnetic coupling of magnetic multilayers; Growth of trilayers on gallium arsenide substrate by molecular beam epitaxy;...

  • Conduction-band offset of single InAs monolayers on GaAs. Colombelli, Raffaele; Piazza, Vincenzo; Badolato, Antonio; Lazzarino, Marco; Beltram, Fabio; Schoenfeld, Winston; Petroff, Pierre // Applied Physics Letters;2/28/2000, Vol. 76 Issue 9 

    A determination of the InAs/GaAs band-offset energy is presented. Electronic-transport analysis, based on capacitance-voltage and deep-level transient spectroscopy techniques, demonstrates high crystalline quality of our sample and yields a band-offset estimate of 0.69 eV, corresponding to a...

  • Third-order nonlinear susceptibility in GaAs/AlxGa1-xAs superlattice with a special layered structure. Dong, Hang; Xiong, Shi-Jie // Journal of Applied Physics;8/15/1994, Vol. 76 Issue 4, p2455 

    Presents a study that calculated third-order nonlinear susceptibility in gallium arsenide/Al[subx]Ga[sub1-x]As superlattice with a special layered structure. Effects of coupling between the periods on the nonlinear optical properties of semiconductor superlattices; Description of the system and...

  • Spatially resolved Raman spectroscopy of a step graded Ge[sub x]Si[sub 1-x] strain relief.... Tsang, J.C.; Dacol, F.H.; Mooney, P.M.; Chu, J.O.; Meyerson, B.S. // Applied Physics Letters;3/8/1993, Vol. 62 Issue 10, p1146 

    Examines multilayered germanium silicide structures using Raman spectroscopy. Effect of argon laser on Raman spectra; Influence of residual strain and disorder on the localization of Raman active modes; Occurrence of strain following a mismatch between the germanium layer and silicon substrate.

  • A Raman study of Au/Te/Au/GaAs (100) ohmic contacts. Münder, H.; Andrzejak, C.; Berger, M. G.; Lüth, H.; Borghs, G.; Wuyts, K.; Watté, J.; Silverans, R. E. // Journal of Applied Physics;1/15/1992, Vol. 71 Issue 2, p739 

    Investigates the ohmic contacts produced by high-energy pulsed laser beam alloying gold/tellurium/gold/n-gallium arsenide (GaAs) by micro Raman spectroscopy. Resistance values determined by I-V measurements on samples with uniformly doped substrate material; Results of Raman spectroscopy;...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics