CH[sub 4]/H[sub 2]: A universal reactive ion etch for II-VI semiconductors?

Foad, M.A.; Wilkinson, C.D.W.
May 1992
Applied Physics Letters;5/18/1992, Vol. 60 Issue 20, p2531
Academic Journal
Describes the reactive ion etching process in a variety of II-IV semiconductors. Enumeration of samples used; Role of the methane/hydrogen molecule gas mixture in the etching system; Use of x-ray photoelectron spectroscopy for etched surface analysis.


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