TITLE

CH[sub 4]/H[sub 2]: A universal reactive ion etch for II-VI semiconductors?

AUTHOR(S)
Foad, M.A.; Wilkinson, C.D.W.
PUB. DATE
May 1992
SOURCE
Applied Physics Letters;5/18/1992, Vol. 60 Issue 20, p2531
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes the reactive ion etching process in a variety of II-IV semiconductors. Enumeration of samples used; Role of the methane/hydrogen molecule gas mixture in the etching system; Use of x-ray photoelectron spectroscopy for etched surface analysis.
ACCESSION #
4258156

 

Related Articles

  • Novel CH[sub 4]/H[sub 2] metalorganic reactive ion etching of Hg[sub 1-x]Cd[sub x]Te. Semu, Allen; Montelius, Lars; Leech, Patrick; Jamieson, David; Silverberg, Per // Applied Physics Letters;9/30/1991, Vol. 59 Issue 14, p1752 

    Examines the feasibility of methane and hydrogen gas metalorganic reactive ion etching of Hg[sub 1-x]Cd[sub x]Te. Analysis of the process parametric effects of etch rate, anisotropy and surface stoichiometry; Introduction of the laser interferometric detection scheme.

  • Reactive ion etching of ferroelectric SrBi[sub 2]Ta[sub x]Nb[sub 2-x]O[sub 9] thin films. Desu, Seshu B.; Wei Pan // Applied Physics Letters;1/22/1996, Vol. 68 Issue 4, p556 

    Investigates the patterning of ferroelectric SrBi[sub 2]Ta[sub x]Nb[sub 2-x]O[sub 9] thin films using reactive ion etching. Comparison between less hazardous etching gas and hydrofluorocarbons; Function of etching parameters; Observation of surface compositional change during etching with the...

  • Wet-Chemical Etching of (1120) ZnO Films. Zhu, J.; Emanetoglu, N. W.; Chen, Y.; Yakshinskiy, B. V.; Lu, Y. // Journal of Electronic Materials;Jun2004, Vol. 33 Issue 6, p556 

    This paper describes the optimized process of wet-chemical etching of a ZnO film grown on an r-plane sapphire. Different etchants and solution ratios have been used to achieve controllable etching rate and steep etching profile. With selected etching solutions, the etching profiles of...

  • Evidence of direct SiO2 etching by fluorocarbon molecules under ion bombardment. Takada, N.; Toyoda, H.; Murakami, I.; Sugai, H. // Journal of Applied Physics;1/1/2005, Vol. 97 Issue 1, p013534 

    In a beam apparatus, influence of fluorocarbon gas (C5F8, C4F8, and CF4 molecules) flux onto SiO2 etching reaction is investigated in comparison to a case of CF2 radical flux. Fluorocarbon molecules or CF2 radicals are incident onto SiO2 surface with Ar+ beam of energy 100–900 eV. Atomic...

  • Influence of HF-H2O2 treatment on Si(100) and Si(111) surfaces. Gräf, D.; Bauer-Mayer, S.; Schnegg, A. // Journal of Applied Physics;8/1/1993, Vol. 74 Issue 3, p1679 

    Examines the time depending influence of hydrogen-fluorine-hydrogen-oxygen mixtures on the silicon and silicon surface. Use of x-ray photoelectron spectroscopy; Hydrogen-oxygen concentration; Oxygen coverage of the silicon surface; Oxidation of silicon-silicon backbonds.

  • Crystallographic dependence of the lateral undercut wet etching rate of InGaP in HCl. Cich, M. J.; Johnson, J. A.; Peake, G. M.; Spahn, O. B. // Applied Physics Letters;1/27/2003, Vol. 82 Issue 4, p651 

    The crystallographic dependence of the lateral etch rate in 12 M HCl of InGaP lattice matched to GaAs has been measured. The etch rate at 20 °C is found to have twofold rotational symmetry about [100] and varies between <0.01 µm/min for mesas oriented along 〈011〉 directions...

  • Examination of the Br+HI, Cl+HI, and F+HI hydrogen abstraction reactions by photoelectron spectroscopy of BrHI-, ClHI-, and FHI-. Bradforth, S. E.; Weaver, A.; Arnold, D. W.; Metz, R. B.; Neumark, D. M. // Journal of Chemical Physics;6/15/1990, Vol. 92 Issue 12, p7205 

    The photoelectron spectra of the ions BrHI-, ClHI-, and FHI-, along with their deuterated counterparts, are presented. These spectra provide information on the transition state region of the potential energy surfaces describing the exothermic neutral reactions X+HI→HX+I(X=Br, Cl, F)....

  • The Effect of Wet Etching on Surface Properties of HgCdTe. Sporken, R.; Kiran, R.; Casselman, T.; Aqariden, F.; Velicu, S.; Chang, Yong; Sivananthan, S. // Journal of Electronic Materials;Aug2009, Vol. 38 Issue 8, p1781 

    The surface of HgCdTe, grown by molecular-beam epitaxy and liquid-phase epitaxy, was studied by atomic force microscopy and x-ray photoelectron microscopy after etching in different solutions such as Br:methanol and HBr:H2O2:H2O. Minority-carrier lifetime and surface recombination velocity were...

  • Origin of threshold voltage shift by interfacial trap density in amorphous InGaZnO thin film transistor under temperature induced stress. Bosul Kim; Chong, Eugene; Do Hyung Kim; Yong Woo Jeon; Dae Hwan Kim; Sang Yeol Lee // Applied Physics Letters;8/8/2011, Vol. 99 Issue 6, p062108 

    Effect of trap-density of amorphous InGaZnO thin film transistors (a-IGZO TFTs) were studied using different analysis of x-ray photoelectron spectroscopy (XPS) depth profile and density of states (DOSs). To change trap-densities systematically, rf-power was varied to cause different effect on...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics