Increased modulation depth of submicron gratings produced by photoelectrochemical etching of GaAs

Twyford, E.J.; Kohl, P.A.
May 1992
Applied Physics Letters;5/18/1992, Vol. 60 Issue 20, p2528
Academic Journal
Demonstrates the photochemical etching of submicron optical diffraction gratings with improved modulation depth on n-gallium arsenide. Purpose of using an elevated etchant temperature; Factors attributed to the enhanced modulation depth; Relationship between the modulation depth and the grating period.


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