Growth of GaN(0001)1x1 on Al[sub 2]O[sub 3](0001) by gas-source molecular beam epitaxy

Powell, R.C.; Lee, N.-E.
May 1992
Applied Physics Letters;5/18/1992, Vol. 60 Issue 20, p2505
Academic Journal
Demonstrates the growth of gallium nitride (GaN)(0001)1x1 semiconductor films on Al[sub 2]O[sub 3](0001) by gas-source molecular beam epitaxy. Application of in situ reflection high-energy electron diffraction analysis; Range of GaN carrier mobilities; Factors responsible for film defects.


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