Atomic scale saw by dislocation slipping: A new method to generate one-dimensional structure

Peyrade, J.P.; Voillot, F.
May 1992
Applied Physics Letters;5/18/1992, Vol. 60 Issue 20, p2481
Academic Journal
Proposes the use of dislocations as an atomic scale saw to generate one-dimensional (1D) semiconductor structures. Application of atomic force and transmission electronic microscopy of surfaces and quantum wells; Feasibility of the atomic scale saw by dislocation slipping method; Basis for the generation of 1D structures.


Related Articles

  • Investigation of AlN films grown by molecular beam epitaxy on vicinal Si(111) as templates for GaN quantum dots. Benaissa, M.; Vennéguès, P.; Tottereau, O.; Nguyen, L.; Semond, F. // Applied Physics Letters;12/4/2006, Vol. 89 Issue 23, p231903 

    The use of AlN epitaxial films deposited on vicinal Si(111) as templates for the growth of GaN quantum dots is investigated by transmission electron microscopy and atomic force microscopy. It is found that the substrate vicinality induces both a slight tilt of the AlN (0001) direction with...

  • Misfit dislocation gettering by substrate pit-patterning in SiGe films on Si(001). Grydlik, Martyna; Boioli, Francesca; Groiss, Heiko; Gatti, Riccardo; Brehm, Moritz; Montalenti, Francesco; Devincre, Benoit; Schäffler, Friedrich; Miglio, Leo // Applied Physics Letters;7/2/2012, Vol. 101 Issue 1, p013119 

    We show that suitable pit-patterning of a Si(001) substrate can strongly influence the nucleation and the propagation of dislocations during epitaxial deposition of Si-rich Si1-xGex alloys, preferentially gettering misfit segments along pit rows. In particular, for a 250 nm layer deposited by...

  • Magnetotransport in manganite trilayer junctions grown by 90° off-axis sputtering. Noh, J. S.; Nath, T. K.; Eom, C. B.; Sun, J. Z.; Tian, W.; Pan, X. Q. // Applied Physics Letters;7/9/2001, Vol. 79 Issue 2 

    We report magnetotransport studies on La[sub 0.67]Sr[sub 0.33]MnO[sub 3]/SrTiO[sub 3]/La[sub 0.67]Sr[sub 0.33]MnO[sub 3] trilayer junctions, fabricated using 90° off-axis sputtering. Films were grown on both (001) (LaAlO[sub 3])[sub 0.3]–(Sr[sub 2]AlTaO[sub 6])[sub 0.7] and (110)...

  • Multiple dislocation loops in linearly graded In[sub x]Ga[sub 1-x]As (0...X...0.53) on GaAs and.... Chang, J.C.P.; Chin, T.P.; Tu, C.W.; Kavanagh, K.L. // Applied Physics Letters;7/26/1993, Vol. 63 Issue 4, p500 

    Observes the appearance of multiple dislocation loops in lattice mismatched III-V semiconductor systems. Use of transmission electron microscopy; Growth of the sample by gas-source molecular beam epitaxy; Influence of threading dislocation density on the loop appearance; Relation between the...

  • Microstructure and origin of dislocation etch pits in GaN epilayers grown by metal organic chemical vapor deposition. Lu, L.; Gao, Z. Y.; Shen, B.; Xu, F. J.; Huang, S.; Miao, Z. L.; Hao, Y.; Yang, Z. J.; Zhang, G. Y.; Zhang, X. P.; Xu, J.; Yu, D. P. // Journal of Applied Physics;Dec2008, Vol. 104 Issue 12, p123525 

    Morphology and microstructure of dislocation etch pits in GaN epilayers etched by molten KOH have been investigated by atomic force microscopy, scanning electron microscopy, and transmission electron microscopy (TEM). Three types of etch pits (α, β, and γ) are observed. The α type...

  • Resistive switching mechanism in delafossite-transition metal oxide (CuInO2–CuO) bilayer structure. Varandani, Deepak; Singh, Bharti; Mehta, Bodh R.; Singh, Mandeep; Singh, Vidya Nand; Gupta, Dasees // Journal of Applied Physics;Jun2010, Vol. 107 Issue 10, p103703 

    This study reports reversible and unipolar resistive switching in oxide bilayer structure due to the conversion of rectifying CuInO2–CuO semiconductor heterojunction to metal-semiconductor CuInO2–Cu Ohmic contact. High resolution transmission electron microscopy and conducting...

  • Ordered domain structures of nitrogen-doped GaInP layers grown by organometallic vapor phase epitaxy. Bong-Joong Kim; Young-Woo Ok; Tae-Yeon Seong; Chapman, D. C.; Stringfellow, G. B. // Journal of Materials Science: Materials in Electronics;Nov2008, Vol. 19 Issue 11, p1092 

    Transmission electron microscopy (TEM) and atomic force microscopy (AFM) studies have been performed on organometallic vapor phase epitaxial GaInP heterostructures grown on (001) GaAs singular and vicinal substrates to investigate nitrogen doping effect on the ordering and domain structures. TEM...

  • The effect of high-In content capping layers on low-density bimodal-sized InAs quantum dots. Trevisi, G.; Suárez, I.; Seravalli, L.; Rivas, D.; Frigeri, P.; Muñoz-Matutano, G.; Grillo, V.; Nasi, L.; Martínez-Pastor, J. // Journal of Applied Physics;May2013, Vol. 113 Issue 19, p194306 

    The structural and morphological features of bimodal-sized InAs/(In)GaAs quantum dots with density in the low 109 cm-2 range were analyzed with transmission electron microscopy and atomic force microscopy and were related to their optical properties, investigated with photoluminescence and...

  • One-dimensional postwetting layer in InGaAs/GaAs(100) quantum-dot chains. Wang, Zh. M.; Mazur, Yu. I.; Shultz, J. L.; Salamo, G. J.; Mishima, T. D.; Johnson, M. B. // Journal of Applied Physics;2/1/2006, Vol. 99 Issue 3, p033705 

    Long chains of quantum dots formed in InGaAs/GaAs(100) multiple layers have been systematically investigated by scanning electron, transmission electron, and atomic force microscopies. In addition to the usual two-dimensional wetting layer involved in the Stranski-Krastanov growth, we have...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics