Effect of free carriers on the linewidth enhancement factor of InGaAs/InP (strained-layer)

Tiemeijer, L.F.; Thijs, P.J.A.
May 1992
Applied Physics Letters;5/18/1992, Vol. 60 Issue 20, p2466
Academic Journal
Analyzes the effect of free carriers on the linewidth enhancement factor of indium gallium arsenide/indium phosphide multiple quantum well lasers. Implication of plasma effect for the linewidth enhancement factor; Factors attributed to the inhibition of carrier movement in polarized lasers; Use of band-gap barriers to prevent heterobarrier carrier leakage.


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