Strained InGaAs/GaAs single quantum well lasers with saturable absorbers fabricated by quantum

Yamada, N.; Harris Jr., J.S.
May 1992
Applied Physics Letters;5/18/1992, Vol. 60 Issue 20, p2463
Academic Journal
Demonstrates the fabrication of strained indium gallium arsenide/gallium arsenide single quantum well lasers with saturable absorbers by quantum well mixing. Utilization of silicon dioxide; Factor attributed to the abrupt change in the output power of the device; Characteristics of gain-switched pulses.


Related Articles

  • Evidence for current-density-induced heating of AlGaAs single-quantum-well laser facets. Tang, W.C.; Rosen, H.J.; Vettiger, P.; Webb, D.J. // Applied Physics Letters;8/26/1991, Vol. 59 Issue 9, p1005 

    Examines the current-density-induced heating of aluminum gallium arsenide single-quantum well laser facets. Use of Raman microprobe spectroscopy; Significance of the absence of large discontinuities below and above the lasing threshold; Implications for the cause of facet heating of the device.

  • Experimental determination of the influence of gain saturation on the temperature dependence of.... Jung, H.; Schlosser, E. // Applied Physics Letters;1/27/1992, Vol. 60 Issue 4, p401 

    Examines the influence of gain saturation on the temperature dependence of threshold current in aluminum gallium arsenide-gallium arsenide quantum-well lasers. Comparison between the threshold current of single and multiple quantum-well lasers; Relationship between cavity length and threshold...

  • Threshold current of single quantum well lasers: The role of the confining layers. Nagle, J.; Hersee, S.; Krakowski, M.; Weil, T.; Weisbuch, C. // Applied Physics Letters;11/17/1986, Vol. 49 Issue 20, p1325 

    The threshold current density of single quantum well (SQW) GaAs/GaAlAs lasers is calculated, taking into account the carrier populations of the confining layer. We find that these populations are significant when compared to those of the quantum well. This effect explains the better performance...

  • Ultrafast absorption recovery due to stimulated emission in GaAs/AlGaAs multiple quantum wells. Dubard, J.; Oudar, J. L.; Alexandre, F.; Hulin, D.; Orszag, A. // Applied Physics Letters;3/30/1987, Vol. 50 Issue 13, p821 

    Subpicosecond time-resolved absorption spectra have revealed carrier lifetimes as short as 10 ps in low-temperature GaAs/AlGaAs multiple quantum well structures (MQWS’s) due to the large stimulated recombination rate caused by amplified spontaneous luminescence guided along the...

  • Operating characteristics of InGaAs/AlGaAs strained single quantum well lasers. Bour, D. P.; Martinelli, Ramon U.; Gilbert, D. B.; Elbaum, L.; Harvey, M. G. // Applied Physics Letters;10/9/1989, Vol. 55 Issue 15, p1501 

    The performance of a series of InxGa1-xAs/AlGaAs (x=0.20 and 0.25) strained single quantum well (SSQW) lasers with lasing wavelengths in the range 930≤λ≤1000 nm is discussed. Less-strained devices, with x=0.20 and QW thickness 7 nm (λ∼930 nm), perform comparably with GaAs...

  • Single and double quantum well lasers with a monolithically integrated passive section. Werner, J.; Lee, T. P.; Kapon, E.; Colas, E.; Stoffel, N. G.; Schwarz, S. A.; Schwartz, L. C.; Andreadakis, N. C. // Applied Physics Letters;8/20/1990, Vol. 57 Issue 8, p810 

    Single (SQW) and double (DQW) quantum well composite cavity GaAs/AlGaAs lasers with an integrated passive section were fabricated and compared. Si implantation was used for partial quantum well disordering in the passive section. Implanted DQW lasers with a 2.6-mm-long cavity had threshold...

  • Generation of picosecond pulses with a gain-switched GaAs surface-emitting laser. Karin, J. R.; Melcer, L. G.; Nagarajan, R.; Bowers, J. E.; Corzine, S. W.; Morton, P. A.; Geels, R. S.; Coldren, L. A. // Applied Physics Letters;9/3/1990, Vol. 57 Issue 10, p963 

    Pulses shorter than 4 ps (deconvolved) have been obtained by optically gain switching a GaAs multiple quantum well vertical-cavity surface-emitting laser with a picosecond dye laser. Pulse width and relative peak delay were measured as a function of pump power. A theoretical model of the large...

  • GaAs quantum well distributed Bragg reflection laser with AlGaAs/GaAs superlattice gratings.... Steckl, A.J.; Chen, P. // Applied Physics Letters;7/10/1995, Vol. 67 Issue 2, p179 

    Investigates the gallium-arsenide quantum well (QW) distributed Bragg reflection (DBR) lasers with aluminum-gallium-arsenic/gallium-arsenic superlattice gratings. Application of the focused ion beam mixing technique; Details on the grating period of DBR; Examination of lasing operation by...

  • High external efficiency (36%) 5-μm mesa isolated GaAs quantum well laser by organometallic vapor phase epitaxy. Welch, D. F.; Schaus, C. F.; Shealy, J. R. // Applied Physics Letters;1/15/1985, Vol. 46 Issue 2, p121 

    High external power efficiencies of 36% are obtained from 5-μm mesa isolated graded-index separate-confinement heterostructure single quantum well lasers grown by organometallic vapor phase epitaxy. Threshold currents of 21 mA are reported for a 5×96 μm cavity laser with differential...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics