Low temperature growth of silicon-boron layer by ultrahigh vacuum chemical vapor deposition

Chen, T.P.; Lei, T.F.
April 1994
Applied Physics Letters;4/4/1994, Vol. 64 Issue 14, p1853
Academic Journal
Examines the growth of polycrystalline silicon-boron (Si-B) layer on recrystallized amorphous silicon. Presence of SiB[sub 6] in Si-B layer; Mobility of the B atoms in Si-B layer during thermal annealing; Reduction of B diffusivity by SiB[sub 6].


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