TITLE

Photoluminescence properties of Si[sub 1-x]Ge[sub x]Si disordered superlattices

AUTHOR(S)
Wakahara, Akihiro; Hasegawa, Toshimichi
PUB. DATE
April 1994
SOURCE
Applied Physics Letters;4/4/1994, Vol. 64 Issue 14, p1850
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the fabrication of silicon germanide (SiGe) disordered superlattices (d-SL) by solid source molecular beam epitaxy. Comparison of photoluminescence (PL) properties between d-SL and ordered SL; Observation of intense PL peak in d-SL; Enhancement of the luminescence process in SiGe strained layer on carrier confinement.
ACCESSION #
4255101

 

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