Electron mobility enhancement in Si using doubly delta-doped layers

Radamson, H.H.; Sardela, M.R.
April 1994
Applied Physics Letters;4/4/1994, Vol. 64 Issue 14, p1842
Academic Journal
Examines the electron mobility for antimony delta-doped layers in silicon. Effects of wave functions on electron mobility enhancement; Use of electron mobility in electronic devices; Enhancement of electron mobility by Schottky gate.


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