TITLE

Electron mobility enhancement in Si using doubly delta-doped layers

AUTHOR(S)
Radamson, H.H.; Sardela, M.R.
PUB. DATE
April 1994
SOURCE
Applied Physics Letters;4/4/1994, Vol. 64 Issue 14, p1842
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the electron mobility for antimony delta-doped layers in silicon. Effects of wave functions on electron mobility enhancement; Use of electron mobility in electronic devices; Enhancement of electron mobility by Schottky gate.
ACCESSION #
4255098

 

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