Bonding partner change reaction in oxidation of Ge on Si(001): Observation of two step formation

Prabhakaran, K.; Ogino, T.
April 1994
Applied Physics Letters;4/4/1994, Vol. 64 Issue 14, p1839
Academic Journal
Investigates bonding partner change reaction of oxygen (O) from germanium (Ge) to silicon (Si) substrates. Formation of silica from Ge to Si by annealing; Breakage of Ge--O bonds to form Si suboxides; Rearrangement of Si--O bonds to form silica.


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