TITLE

High-temperature stable Ir-Al/n-GaAs Schottky diodes

AUTHOR(S)
Lalinsky, T.; Gregusova, D.
PUB. DATE
April 1994
SOURCE
Applied Physics Letters;4/4/1994, Vol. 64 Issue 14, p1818
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the thermal stability of iridium-aluminum (Ir-Al)/gallium arsenide Schottky diodes. Dependence of the thermal stability on deposition technique and annealing conditions; Advantages of stable Schottky diodes for making Ir-Al as an attractive metal; Confirmation of the thermal stability by interfacial stability investigations.
ACCESSION #
4255090

 

Related Articles

  • General interfacial layer expression for the equilibrium Schottky barrier height and its application to annealed Au-GaAs contacts. Horváth, Zs. J. // Applied Physics Letters;3/6/1989, Vol. 54 Issue 10, p931 

    A general expression based on the interfacial layer model is derived for the equilibrium Schottky barrer height, and it is applied to annealed Au-GaAs contacts. Relations between the experimental barrier height, relative interfacial layer thickness and interface charge values, and the interface...

  • Schottky barrier height of MnSb(0001)/GaAs(111)B contacts: Influence of interface structure. Manago, T. // Journal of Applied Physics;8/15/2000, Vol. 88 Issue 4, p2043 

    Investigates the current-voltage characteristics of Schottky barrier height of manganese antimony/gallium arsenide diodes. Relationship between Schottky barrier height and ideality factor of the diodes; Implications for the scatter of ideality factors and the barrier heights; Origins of...

  • Nb/GaAs and NbN/GaAs Schottky barriers. Wu, X. W.; Zhang, L. C.; Bradley, P.; Chin, D. K.; Van Duzer, T. // Applied Physics Letters;2/2/1987, Vol. 50 Issue 5, p287 

    Niobium and niobium nitride films have been deposited on n-GaAs substrates using dc magnetron sputtering to form Nb/GaAs and NbN/GaAs Schottky diodes. Current-voltage(I-V) measurements were made on the diodes and the metal/GaAs interfaces were studied by Rutherford backscattering spectrometry....

  • Interface-controlled Au/GaAs Schottky contact with surface sulfidation and interfacial hydrogenation. Kang, Min-Gu; Park, Hyung-Ho // Journal of Applied Physics;5/1/2001, Vol. 89 Issue 9, p5204 

    We report a GaAs passivation method using sulfidation and hydrogenation to achieve the Au/GaAs interface free of defective interfacial compounds, through which improves the electrical properties of the Schottky contact. A sulfur-passivated GaAs Schottky diode exhibited improved contact...

  • High-gain photorefractive two-beam coupling in semi-insulating GaAs with pump-controlled suppression of the Schottky barrier. Chomsky, Doron; Sternklar, Shmuel; Zigler, Arie; Jackel, Steven // Applied Physics Letters;7/30/1990, Vol. 57 Issue 5, p422 

    Suppression of the Schottky barrier effect in semi-insulating GaAs is demonstrated by centering the pump irradiation on the reverse bias crystal-electrode interface. A photorefractive gain coefficient Γ of 2.7 cm-1 is achieved. The irradiation suppression overcomes the need for externally...

  • Photoelectric Properties of Planar Structures with Double Schottky Barrier Treated in a High-Vacuum Microwave Discharge. Ushakov, N. M.; Terent’ev, S. A.; Yafarov, R. K. // Technical Physics Letters;Aug2002, Vol. 28 Issue 8, p625 

    The state of the surface of n-GaAs crystals upon high-vacuum microwave plasmachemical (HVMWPC) etching in various gas mixtures and the influence of the semiconductor surface condition on the photoelectric characteristics of related metal-semiconductor-metal structures with double Schottky...

  • Hydrogenation of GaAs on Si: Effects on diode reverse leakage current. Pearton, S. J.; Wu, C. S.; Stavola, Michael; Ren, F.; Lopata, J.; Dautremont-Smith, W. C.; Vernon, S. M.; Haven, V. E. // Applied Physics Letters;8/17/1987, Vol. 51 Issue 7, p496 

    Plasma hydrogenation for 3 h at 250 °C of GaAs layers grown directly on Si substrates by metalorganic chemical vapor deposition, followed by a 5-min, 400 °C anneal to restore the passivated shallow donor electrical activity, increases the reverse breakdown voltage of Schottky diode...

  • Influence of interfacial contamination on the structure and barrier height of Cr/GaAs Schottky contacts. Liliental-Weber, Z.; Newman, N.; Washburn, J.; Weber, E. R.; Spicer, W. E. // Applied Physics Letters;1/23/1989, Vol. 54 Issue 4, p356 

    The structure of as-deposited and annealed Cr/GaAs Schottky contacts was investigated by high resolution and analytical electron microscopy. The Schottky barrier height for contacts prepared by cleavage and in situ metallization in ultrahigh vacuum was stable upon annealing up to 370 °C in...

  • A nanoscale Ti/GaAs metal-semiconductor hybrid sensor for room temperature light detection. Newaz, A. K. M.; Chang, W.-J.; Wallace, K. D.; Edge, L. C.; Wickline, S. A.; Bashir, R.; Gilbertson, A. M.; Cohen, L. F.; Solin, S. A. // Applied Physics Letters;8/23/2010, Vol. 97 Issue 8, p082105 

    We report an individually addressable Ti/GaAs metal-semiconductor hybrid optical nanosensor with positive photoresistance and a sensitivity that increases as the device dimensions shrink. The underlying physics relates to the crossover from ballistic to diffusive transport of the photoinduced...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics