Broadband (8-14 mum), normal incidence, pseudomorphic Ge[sub x]Si[sub 1-x]/Si strained-layer

People, R.; Bean, J.C.
August 1992
Applied Physics Letters;8/31/1992, Vol. 61 Issue 9, p1122
Academic Journal
Examines the performance characteristics of the pseudomorphic Ge[sub x]Si[sub 1-x]/silicon (Si) strained-layer quantum well infrared (IR) photodetector on (001) Si. Range of IR photodetector operation; Factors attributed to the broadband photoresponse of the device; Quantum efficiency of the Fourier transform infrared measurement.


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