TITLE

Charge transfer and low-temperature electron mobility in a strained Si layer in relaxed

AUTHOR(S)
Stern, Frank; Laux, Steven E.
PUB. DATE
August 1992
SOURCE
Applied Physics Letters;8/31/1992, Vol. 61 Issue 9, p1110
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents the charge transfer and low-temperature electron mobility in a strained silicon (Si) layer grown on relaxed Si[sub 1-x]Ge[sub x]. Value of the Si conduction band off-set; Use of remote doping impurity scattering in high-mobility samples; Characteristics of samples with enhanced interface scattering.
ACCESSION #
4255057

 

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