Charge transfer and low-temperature electron mobility in a strained Si layer in relaxed

Stern, Frank; Laux, Steven E.
August 1992
Applied Physics Letters;8/31/1992, Vol. 61 Issue 9, p1110
Academic Journal
Presents the charge transfer and low-temperature electron mobility in a strained silicon (Si) layer grown on relaxed Si[sub 1-x]Ge[sub x]. Value of the Si conduction band off-set; Use of remote doping impurity scattering in high-mobility samples; Characteristics of samples with enhanced interface scattering.


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