Observation of interface traps in the silicon conduction band at the (100)Si/SiO[sub 2]

Anderson, W.R.; Wheeler, R.G.
August 1992
Applied Physics Letters;8/31/1992, Vol. 61 Issue 9, p1107
Academic Journal
Examines interface traps above the silicon conduction band at the (100)silicon/silicon dioxide interface. Evidence for the formation of conduction-band interface traps; Use of the circuit model to extract trap densities and time constants; Localization of the trap energy level.


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