Low residual impurities assessment by photoluminescence in multistep wafer-annealed

Ka, O.; Oda, O.
August 1992
Applied Physics Letters;8/31/1992, Vol. 61 Issue 9, p1095
Academic Journal
Characterizes the multistep wafer-annealed semi-insulating gallium arsenide wafers by photoluminescence. Assessment of low residual impurities; Use of carbon as the main shallow acceptor; Consequences of impurity reduction in device applications.


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