TITLE

Improved performance of carbon-doped GaAs base heterojunction bipolar transistors through the

AUTHOR(S)
Abernathy, C.R.; Ren, F.
PUB. DATE
August 1992
SOURCE
Applied Physics Letters;8/31/1992, Vol. 61 Issue 9, p1092
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the use of indium gallium phosphide (InGaP) to improve the performance of carbon-doped gallium arsenide base heterojunction bipolar transistors. Factors attributed to limited device breakdown voltage and power handling capability; Value of InGaP ideality factors; Elimination of the crossover of the base and collector currents.
ACCESSION #
4255051

 

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